SI4963DY_NL

更新时间： 2024-11-27 13:13:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
3页	45K
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SI4963DY_NL 数据手册

January 2001

Si4963DY

Dual P-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

· –6.2 A, –20 V, R_DS(ON)= 33 mW @ V_GS= –4.5 V

R_DS(ON)= 50 mW @ V_GS= –2.5 V

management applications with a wide range of gate

drive voltage (2.5V – 12V).

· Extended V_GSSrange (±12V) for battery applications

· Low gate charge

Applications

Load switch

· High performance trench technology for extremely

low R_DS(ON)

Motor drive

DC/DC conversion

Power management

· High power and current handling capability

SO-8

G2 S

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

±12

–6.2

–40

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

(Note 1a)

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

4963

Si4963DY

13’’

12mm

2500 units

Ó2001 Fairchild Semiconductor International

Si4963DY Rev A(W)

12 3

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