Datasheet > SI4963BDY_07

SI4963BDY_07

更新时间： 2024-11-06 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	71K
描述
Dual P-Channel 2.5-V (G-S) MOSFET

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SI4963BDY_07 数据手册

Si4963BDY

Vishay Siliconix

New Product

Dual P-Channel 2.5-V (G-S) MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.032 @ V = −4.5 V

−6.5

−5.2

−20

0.050 @ V = −2.5

SO-8

Top View

Ordering Information: Si4963BDY—E3 (Lead Free)

Si4963BDY-T1—E3 (Lead Free with Tape and Reel)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"12

= 25_C

= 70_C

−4.9

−3.9

−6.5

−5.2

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−40

continuous Source Current (Diode Conduction)

−1.7

2.0

−0.9

1.1

= 25_C

= 70_C

Maximum Power Dissipation

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm

Document Number: 72753

S-40235—Rev. A, 16-Feb-04

www.vishay.com

12 3 4 5

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SI4963DY_NL	FAIRCHILD	获取价格	暂无描述
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