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SI4967DY-E3 PDF预览

SI4967DY-E3

更新时间: 2024-11-24 20:48:27
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 84K
描述
Transistor

SI4967DY-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.84最大漏极电流 (Abs) (ID):7.5 A
FET 技术:METAL-OXIDE SEMICONDUCTOR湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

SI4967DY-E3 数据手册

 浏览型号SI4967DY-E3的Datasheet PDF文件第2页浏览型号SI4967DY-E3的Datasheet PDF文件第3页浏览型号SI4967DY-E3的Datasheet PDF文件第4页浏览型号SI4967DY-E3的Datasheet PDF文件第5页 
Si4967DY  
Vishay Siliconix  
Dual P-Channel 1.8-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.023 @ V = -4.5 V  
GS  
-7.5  
-6.7  
-5.4  
0.030 @ V = -2.5 V  
GS  
-12  
0.045 @ V = -1.8 V  
GS  
S
1
S
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View  
D
1
D
1
D
2
D
2
Ordering Information: Si4967DY  
Si4967DY-T1 (with Tape and Reel)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
-12  
DS  
V
V
GS  
"8  
T
= 25_C  
= 70_C  
-7.5  
-6.1  
A
a, b  
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
A
Pulsed Drain Current  
I
-30  
DM  
a, b  
Continuous Source Current (Diode Conduction)  
I
S
-1.7  
T
= 25_C  
= 70_C  
2.0  
A
a, b  
Maximum Power Dissipation  
P
W
D
T
A
1.3  
Operating Junction and Storage Temperature Range  
T , T  
J
-55 to 150  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
62.5  
a
Maximum Junction-to-Ambient  
R
thJA  
_
C/W  
Steady State  
93  
Notes  
a. Surface Mounted on FR4 Board.  
b. t v10 sec.  
Document Number: 70813  
S-31989—Rev. C, 13-Oct-03  
www.vishay.com  
1

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