5秒后页面跳转
SI4963BDY-T1-E3 PDF预览

SI4963BDY-T1-E3

更新时间: 2024-11-06 22:59:39
品牌 Logo 应用领域
威世 - VISHAY 光电二极管晶体管
页数 文件大小 规格书
8页 157K
描述
MOSFET 2P-CH 20V 4.9A 8-SOIC

SI4963BDY-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:7.26配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):4.9 A
最大漏极电流 (ID):4.9 A最大漏源导通电阻:0.032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管元件材料:SILICON

SI4963BDY-T1-E3 数据手册

 浏览型号SI4963BDY-T1-E3的Datasheet PDF文件第2页浏览型号SI4963BDY-T1-E3的Datasheet PDF文件第3页浏览型号SI4963BDY-T1-E3的Datasheet PDF文件第4页浏览型号SI4963BDY-T1-E3的Datasheet PDF文件第5页浏览型号SI4963BDY-T1-E3的Datasheet PDF文件第6页浏览型号SI4963BDY-T1-E3的Datasheet PDF文件第7页 
Si4963BDY  
Vishay Siliconix  
Dual P-Channel 2.5-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 6.5  
- 5.2  
Definition  
0.032 at VGS = - 4.5 V  
0.050 at VGS = - 2.5 V  
Compliant to RoHS Directive 2002/95/EC  
- 20  
S
1
S
2
SO-8  
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
G
1
S
2
2
G
G
2
1
G
Top View  
D
D
2
1
Ordering Information: Si4963BDY-T1-E3 (Lead (Pb)-free)  
Si4963BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 20  
V
VGS  
12  
TA = 25 °C  
TA = 70 °C  
- 6.5  
- 5.2  
- 4.9  
- 3.9  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 40  
Continuous Source Current (Diode Conduction)a  
- 1.7  
2.0  
- 0.9  
1.1  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
1.3  
0.7  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
58  
Maximum  
62.5  
Unit  
t 10 s  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
91  
110  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
34  
40  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.  
Document Number: 72753  
S09-0704-Rev. B, 27-Apr-09  
www.vishay.com  
1

SI4963BDY-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI4963BDY-T1-GE3 VISHAY

完全替代

MOSFET 2P-CH 20V 4.9A 8SOIC
NTMD6P02R2G ONSEMI

功能相似

Power MOSFET 6 A, 20 V, P−Channel SOIC−8,
NTMD6P02R2 ONSEMI

功能相似

Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual

与SI4963BDY-T1-E3相关器件

型号 品牌 获取价格 描述 数据表
SI4963BDY-T1-GE3 VISHAY

获取价格

MOSFET 2P-CH 20V 4.9A 8SOIC
SI4963DY FAIRCHILD

获取价格

Dual P-Channel 2.5V Specified PowerTrench MOSFET
SI4963DY_NL FAIRCHILD

获取价格

暂无描述
SI4963DYD84Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Me
SI4963DY-E3 VISHAY

获取价格

Transistor,
SI4963DYF011 FAIRCHILD

获取价格

Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Me
SI4963DYL86Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Me
SI4965DY VISHAY

获取价格

Dual P-Channel 1.8-V (G-S) MOSFET
SI4965DY-T1 VISHAY

获取价格

Dual P-Channel 1.8-V (G-S) MOSFET
SI4965DY-T1-GE3 VISHAY

获取价格

Power Field-Effect Transistor, 8V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Se