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NTMD6P02R2G PDF预览

NTMD6P02R2G

更新时间： 2024-02-20 21:18:22
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号场效应晶体管开关光电二极管局域网
页数 文件大小 规格书
6页 124K
描述
Power MOSFET 6 A, 20 V, P−Channel SOIC−8, Dual

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NTMD6P02R2G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
零件包装代码：SOT包装说明：LEAD FREE, MINIATURE, CASE 751-07, SOIC-8
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.66
其他特性：LOGIC LEVEL COMPATIBLE, AVALANCHE RATED配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压：20 V最大漏极电流 (Abs) (ID)：6.2 A
最大漏极电流 (ID)：4.8 A最大漏源导通电阻：0.033 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：450 pF
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：2 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTMD6P02R2G 数据手册

 浏览型号NTMD6P02R2G的Datasheet PDF文件第2页浏览型号NTMD6P02R2G的Datasheet PDF文件第3页浏览型号NTMD6P02R2G的Datasheet PDF文件第4页浏览型号NTMD6P02R2G的Datasheet PDF文件第5页浏览型号NTMD6P02R2G的Datasheet PDF文件第6页 
NTMD6P02, NVMD6P02  
Power MOSFET  
6 A, 20 V, P−Channel SOIC−8, Dual  
Features  
• Ultra Low R  
DS(on)  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
• Miniature Dual SOIC−8 Surface Mount Package  
• Diode Exhibits High Speed, Soft Recovery  
• Avalanche Energy Specified  
http://onsemi.com  
6 AMPERES, 20 VOLTS  
• These Devices are Pb−Free and are RoHS Compliant  
• NVMD Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
P−Channel  
D
Applications  
• Power Management in Portable and Battery−Powered Products,  
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards  
G
MAXIMUM RATINGS  
Rating  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
S
V
DSS  
−20  
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Gate−to−Source Voltage − Continuous  
V
"12  
V
GS  
Thermal Resistance −  
Junction−to−Ambient (Note 1)  
R
62.5  
2.0  
−7.8  
−5.7  
0.5  
−3.89  
−40  
°C/W  
W
A
D1 D1 D2 D2  
q
JA  
8
Total Power Dissipation @ T = 25°C  
P
D
A
8
Continuous Drain Current @ T = 25°C  
I
I
P
A
D
D
D
D
1
Continuous Drain Current @ T = 70°C  
A
E6P02x  
A
SOIC−8  
AYWW G  
CASE 751  
G
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 4)  
W
A
I
STYLE 11  
I
A
DM  
1
Thermal Resistance −  
S1 G1 S2 G2  
Junction−to−Ambient (Note 2)  
R
98  
1.28  
−6.2  
−4.6  
0.3  
−3.01  
−35  
°C/W  
W
A
q
P
JA  
D
D
D
D
D
Total Power Dissipation @ T = 25°C  
A
E6P02 = Specific Device Code  
Continuous Drain Current @ T = 25°C  
I
I
P
A
x
A
Y
WW  
G
= Blank or S  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
Continuous Drain Current @ T = 70°C  
A
A
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 4)  
W
A
I
I
A
DM  
Thermal Resistance −  
Junction−to−Ambient (Note 3)  
R
166  
0.75  
−4.8  
−3.5  
0.2  
−2.48  
−30  
°C/W  
W
A
(Note: Microdot may be in either location)  
q
P
JA  
D
D
D
D
D
Total Power Dissipation @ T = 25°C  
A
Continuous Drain Current @ T = 25°C  
I
I
P
I
A
Continuous Drain Current @ T = 70°C  
A
A
ORDERING INFORMATION  
Maximum Operating Power Dissipation  
Maximum Operating Drain Current  
Pulsed Drain Current (Note 4)  
W
A
†
Device  
Package  
Shipping  
I
A
DM  
NTMD6P02R2G  
NTMD6P02R2SG  
NVMD6P02R2G  
SOIC−8  
(Pb−Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
2500 / Tape & Reel  
Operating and Storage Temperature Range  
T , T  
J
−55 to  
+150  
°C  
stg  
SOIC−8  
(Pb−Free)  
Single Pulse Drain−to−Source Avalanche  
E
500  
mJ  
AS  
Energy − Starting T = 25°C (V = −20 Vdc,  
J
DD  
V
= −5.0 Vdc, Peak I = −5.0 Apk,  
L
GS  
SOIC−8  
L = 40 mH, R = 25 W)  
G
(Pb−Free)  
Maximum Lead Temperature for Soldering  
Purposes for 10 seconds  
T
260  
°C  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = 10 seconds.  
2. Mounted onto a 2″ square FR−4 Board (1 in sq, 2 oz. Cu 0.06″ thick single sided), t = steady state.  
3. Minimum FR−4 or G−10 PCB, t = steady state.  
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
December, 2012 − Rev. 4  
NTMD6P02R2/D  
 
123456

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