Datasheet > NTMFD0D9N02P1E

NTMFD0D9N02P1E

更新时间： 2024-09-27 11:15:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
11页	506K
描述
功率 Mosfet，30/25V，POWERTRENCH® Power Clip

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中文翻译

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NTMFD0D9N02P1E 数据手册

NTMFD0D9N02P1E

MOSFET – Power, Dual,

N-Channel, Power Trench,

Power Clip, Asymmetric

30ꢀV / 25 V

www.onsemi.com

Features

• Small Footprint (5x6mm) for Compact Design

• Low R

to Minimize Conduction Losses

FET

MAX

I MAX

DS(on)

(BR)DSS

DS(on)

• Low Q and Capacitance to Minimize Driver Losses

3.0 mW @ 10 V

3.8 mW @ 4.5 V

0.72 mW @ 10 V

0.95 mW @ 4.5 V

30 V

77 A

• Designed with Low Rg for Fast Switching Applications

• These are Pb−free, Halogen Free / BFR Free and are RoHS

25 V

180 A

Compliant

Typical Applications

• DC−DC Converters

PIN1

• System Voltage Rails

• General Purpose Point of Load

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

Sym-

bol

Parameter

Drain−to−Source Voltage

Unit

PQFN8

POWER CLIP

CASE 483AR

DSS

Gate−to−Source Voltage

+16V +16V

−12V −12V

MARKING DIAGRAM

Continuous Drain Cur- Steady

= 25°C

= 85°C

180

130

rent R

(Note 3)

State

&Z&3&K

2EGN

Power Dissipation

(Note 3)

T = 25°C

29.2 37.4

Continuous Drain Cur- Steady

rent R (Note 1, 3)

State

T = 25°C

= Assembly Plant Code

= Numeric Date Code

= Lot Code

T = 85°C

Power Dissipation

(Note 1, 3)

T = 25°C

2.1

2.3

2EGN = Specific Device Code

Continuous Drain Cur- Steady

rent R (Note 2, 3)

State

T = 25°C

ELECTRICAL CONNECTION

T = 85°C

Power Dissipation

(Note 2, 3)

T = 25°C

0.96 1.04

Pulsed Drain Current T = 25°C, t = 10 ms

356 1023

Single Pulse Drain−to−Source Avalanche

Energy Q1: I = 10 A , L = 3 mH (Note 4)

150

600

Energy Q2: I = 20 A , L = 3 mH (Note 4)

Operating Junction and Storage Temperature

T ,

stg

−55 to 150

°C

ORDERING INFORMATION

†

Device

NTMFD0D9N02P1E

Package

Shipping

Lead Temperature Soldering Reflow for Sol-

dering Purposes (1/8″ from case for 10 s)

260

PQFN8

(Pb−Free)

3000 / Tape &

Reel

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Publication Order Number:

May, 2019 − Rev. 0

NTMFD0D9N02P1E/D

12 3 4 5 6 7...11

中文翻译

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与NTMFD0D9N02P1E相关器件

型号	品牌	获取价格	描述	数据表
NTMFD1D1N02X	ONSEMI	获取价格	Dual Power MOSFETs, N-Channel, 25V, 3.0mΩ/75A
NTMFD1D4N02P1E	ONSEMI	获取价格	MOSFET, Power, 25V Dual N-Channel Power Clip
NTMFD4901NF	ONSEMI	获取价格	Dual N-Channel Power MOSFET with Integrated Schottky
NTMFD4901NF_14	ONSEMI	获取价格	Dual N-Channel Power MOSFET
NTMFD4901NFT1G	ONSEMI	获取价格	30 V, High Side 18 A / Low Side 30 A, Dual Nâ
NTMFD4901NFT3G	ONSEMI	获取价格	Dual N-Channel Power MOSFET
NTMFD4902NF	ONSEMI	获取价格	Dual N-Channel Power MOSFET
NTMFD4902NFT1G	ONSEMI	获取价格	Dual N-Channel Power MOSFET
NTMFD4902NFT3G	ONSEMI	获取价格	Dual N-Channel Power MOSFET
NTMFD4C20N	ONSEMI	获取价格	Dual N-Channel Power MOSFET

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