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NTMFD1D1N02X

更新时间： 2024-11-25 11:13:23
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 396K
描述
Dual Power MOSFETs, N-Channel, 25V, 3.0mΩ/75A, 0.87mΩ/178A, Asymmetric, Power Clip Dual 5x6 

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NTMFD1D1N02X 数据手册

 浏览型号NTMFD1D1N02X的Datasheet PDF文件第2页浏览型号NTMFD1D1N02X的Datasheet PDF文件第3页浏览型号NTMFD1D1N02X的Datasheet PDF文件第4页浏览型号NTMFD1D1N02X的Datasheet PDF文件第5页浏览型号NTMFD1D1N02X的Datasheet PDF文件第6页浏览型号NTMFD1D1N02X的Datasheet PDF文件第7页 
DATA SHEET  
www.onsemi.com  
MOSFET - Power, Dual,  
N-Channel, Power Clip,  
POWERTRENCH),  
Asymmetric  
FET  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
3.0 mꢂ @ 10 V  
3.75 mꢂ @ 4.5 V  
0.87 mꢂ @ 10 V  
1.1 mꢂ @ 4.5 V  
Q1  
25 V  
75 A  
Q2  
25 V  
178 A  
25 V  
PIN1  
NTMFD1D1N02X  
Features  
• Small Footprint (5x6mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
G
PQFN8  
POWER CLIP  
CASE 483AR  
• These are Pb−free, Halogen Free / BFR Free and are RoHS  
Compliant  
Typical Applications  
• DC−DC Converters  
• System Voltage Rails  
MARKING DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
NTMFD1  
D1N02X  
AWLYWW  
Sym-  
bol  
Parameter  
Drain−to−Source Voltage  
Q1  
Q2  
Unit  
V
V
DSS  
25  
25  
NTMFD1D1N02X = Specific Device Code  
A
WL  
Y
= Assembly Site  
Gate−to−Source Voltage  
V
+16V +16V  
V
GS  
−12V −12V  
= Wafer Lot Number  
= Year of Production  
= Work Week Number  
Continuous Drain Cur- Steady  
T
T
T
= 25°C  
= 85°C  
= 25°C  
I
75  
54  
27  
178  
128  
44  
A
C
C
C
D
WW  
rent R  
(Note 3)  
State  
ꢀ
JC  
Power Dissipation  
(Note 3)  
P
W
A
D
D
D
ELECTRICAL CONNECTION  
R
ꢀ
JC  
Continuous Drain Cur- Steady  
rent R (Notes 1, 3) State  
T = 25°C  
A
I
20  
15  
40  
29  
D
ꢀ
JA  
T = 85°C  
A
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
A
P
2.1  
2.3  
W
A
R
ꢀ
JA  
Continuous Drain Cur- Steady  
rent R (Notes 2, 3) State  
T = 25°C  
A
I
14  
10  
27  
20  
D
ꢀ
JA  
T = 85°C  
A
Power Dissipation  
(Notes 2, 3)  
T = 25°C  
A
P
0.96  
1.0  
W
A
R
ꢀ
JA  
ORDERING INFORMATION  
Pulsed Drain Current  
T
p
= 25°C,  
t = 100 ꢁ s  
I
331  
47  
625  
277  
C
DM  
†
Device  
Package  
Shipping  
NTMFD1D1N02X  
PQFN8  
(Pb−Free)  
3000 / Tape &  
Reel  
Single Pulse Drain−to−Source Avalanche  
Energy Q1: I = 5.6 A , L = 3 mH (Note 4)  
E
mJ  
AS  
L
pk  
Energy Q2: I = 13.6 A , L = 3 mH (Note 4)  
L
pk  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Operating Junction and Storage Temperature  
Range  
T ,  
−55 to 150  
°C  
°C  
J
T
stg  
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8″ from case for 10 s)  
T
260  
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2021  
1
Publication Order Number:  
July, 2022 − Rev. 0  
NTMFD1D1N02X/D  
1234567...11

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