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NTMFD1D4N02P1E PDF预览

NTMFD1D4N02P1E

更新时间： 2023-09-03 20:35:32
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
11页 503K
描述
MOSFET, Power, 25V Dual N-Channel Power Clip

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NTMFD1D4N02P1E 数据手册

 浏览型号NTMFD1D4N02P1E的Datasheet PDF文件第2页浏览型号NTMFD1D4N02P1E的Datasheet PDF文件第3页浏览型号NTMFD1D4N02P1E的Datasheet PDF文件第4页浏览型号NTMFD1D4N02P1E的Datasheet PDF文件第5页浏览型号NTMFD1D4N02P1E的Datasheet PDF文件第6页浏览型号NTMFD1D4N02P1E的Datasheet PDF文件第7页 
MOSFET – Power, Dual,  
N-Channel, Power Trench,  
Power Clip, Asymmetric  
25 V  
NTMFD1D4N02P1E  
Features  
www.onsemi.com  
• Small Footprint (5x6mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
• Low Q and Capacitance to Minimize Driver Losses  
DS(on)  
FET  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(on)  
G
3.3 mW @ 10 V  
4.2 mW @ 4.5 V  
1.1 mW @ 10 V  
1.33 mW @ 4.5 V  
Q1  
25 V  
74 A  
• These are Pb−free, Halogen Free / BFR Free and are RoHS  
Compliant  
Q2  
25 V  
155 A  
Typical Applications  
• DC−DC Converters  
• System Voltage Rails  
PIN1  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Sym-  
bol  
Parameter  
Drain−to−Source Voltage  
Q1  
Q2  
Unit  
V
V
DSS  
25  
25  
PQFN8  
POWER CLIP  
CASE 483AR  
Gate−to−Source Voltage  
V
GS  
+16V +16V  
−12V −12V  
V
Continuous Drain Cur- Steady  
T
T
= 25°C  
= 85°C  
I
74  
53  
25  
155  
112  
41  
A
C
D
rent R  
(Note 3)  
State  
q
JC  
MARKING DIAGRAM  
C
Power Dissipation  
(Note 3)  
T = 25°C  
A
P
W
A
D
D
D
2EKN  
AYWWZZ  
R
q
JC  
Continuous Drain Cur- Steady  
rent R (Notes 1, 3) State  
T = 25°C  
A
I
D
20  
14  
36  
26  
q
JA  
T = 85°C  
A
2EKN = Specific Device Code  
A
Y
= Assembly Location  
= Year  
Power Dissipation  
(Notes 1, 3)  
T = 25°C  
A
P
2.1  
2.3  
W
A
R
q
JA  
WW  
ZZ  
= Work Week  
= Assembly Lot Code  
Continuous Drain Cur- Steady  
rent R (Notes 2, 3) State  
T = 25°C  
A
I
D
13  
10  
24  
17  
q
JA  
T = 85°C  
A
ELECTRICAL CONNECTION  
Power Dissipation  
(Notes 2, 3)  
T = 25°C  
A
P
0.96  
1.0  
W
R
q
JA  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
325  
134  
552  
604  
A
A
p
Single Pulse Drain−to−Source Avalanche  
Energy Q1: I = 9.4 A , L = 3 mH (Note 4)  
E
AS  
mJ  
L
pk  
Energy Q2: I = 20.1 A , L = 3 mH (Note 4)  
L
pk  
Operating Junction and Storage Temperature  
Range  
T ,  
stg  
−55 to 150  
°C  
°C  
J
T
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8″ from case for 10 s)  
T
L
260  
ORDERING INFORMATION  
†
Device  
NTMFD1D4N02P1E  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
PQFN8  
(Pb−Free)  
3000 / Tape &  
Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
January, 2020 − Rev. 1  
NTMFD1D4N02P1E/D  
1234567...11

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