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NTMFD030N06CT1G

更新时间： 2023-09-03 20:35:12
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
7页 248K
描述
Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 29.7 mΩ, 19 A

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NTMFD030N06CT1G 数据手册

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MOSFET - Power, Dual  
N-Channel, DUAL SO8FL  
60 V, 29.7 mW, 19 A  
NTMFD030N06C  
Features  
www.onsemi.com  
• Small Footprint (5x6 mm) for Compact Design  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Q and Capacitance to Minimize Driver Losses  
G
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
60 V  
29.7 mW @ 10 V  
19 A  
Typical Applications  
• Power Tools, Battery Operated Vacuums  
• UAV/Drones, Material Handling  
• BMS/Storage, Home Automation  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol Value Units  
V
60  
20  
19  
13  
23  
11  
7
V
V
A
DSS  
V
GS  
Continuous Drain  
Current R  
Steady  
State  
T
= 25°C  
= 100°C  
= 25°C  
I
D
C
MARKING  
DIAGRAM  
q
JC  
T
C
(Notes 1, 3)  
Power Dissipation  
Steady  
State  
T
C
P
W
A
1
D
R
(Note 1)  
q
JC  
30DN6C  
AYWZZ  
DFN8 5x6  
(SO8FL)  
T
C
= 100°C  
Continuous Drain  
Current R  
Steady  
State  
T = 25°C  
A
I
D
CASE 506BT  
q
JA  
T = 100°C  
A
5
(Notes 1, 2, 3)  
30DN6C= Specific Device Code  
Power Dissipation  
Steady  
State  
T = 25°C  
P
3.2  
1.6  
63  
W
A
D
A
Y
= Assembly Location  
= Year  
R
(Notes 1, 2)  
q
JA  
T = 100°C  
A
W
ZZ  
= Work Week  
= Lot Traceability  
Pulsed Drain Current T = 25°C, t = 10 ms  
I
DM  
A
A
p
Operating Junction and Storage Temperature  
Range  
T , T  
−55 to  
+175  
°C  
J
stg  
ORDERING INFORMATION  
Source Current (Body Diode)  
I
19  
10  
A
S
†
Device  
Package  
Shipping  
Single Pulse Drain−to−Source Avalanche  
E
AS  
mJ  
Energy (I = 4.4 A  
)
L
pk  
NTMFD030N06CT1G SO8FL Dual  
(Pb-Free)  
1500 /  
Tape & Reel  
Lead Temperature Soldering Reflow for  
Soldering Purposes (1/8″ from case for 10 s)  
T
260  
°C  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. The entire application environment impacts the thermal resistance values shown,  
they are not constants and are only valid for the particular conditions noted.  
2. Surface−mounted on FR4 board using a 650 mm , 2 oz. Cu pad.  
2
3. Maximum current for pulses as long as 1 second is higher but is dependent  
on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2020  
1
Publication Order Number:  
January, 2020 − Rev. 0  
NTMFD030N06C/D  
 
1234567

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