Datasheet > SI4963BDY

SI4963BDY

更新时间： 2024-09-15 21:55:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	237K
描述
Dual P-Channel 2.5-V (G-S) MOSFET

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SPICE Device Model Si4963BDY

Vishay Siliconix

Dual P-Channel 2.5-V (G-S) MOSFET

CHARACTERISTICS

· P-Channel Vertical DMOS

· Macro Model (Subcircuit Model)

· Level 3 MOS

· Apply for both Linear and Switching Application

· Accurate over the - 55 to 125°C Temperature Range

· Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the p-channel vertical DMOS. The subcircuit

model is extracted and optimized over the - 55 to 125°C

temperature ranges under the pulsed 0 to 5V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to model

the gate charge characteristics while avoiding convergence difficulties

of the switched C_gdmodel. All model parameter values are optimized

to provide a best fit to the measured electrical data and are not

intended as an exact physical interpretation of the device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 72770

20-May-04

www.vishay.com

12 3

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与SI4963BDY相关器件

型号	品牌	获取价格	描述	数据表
SI4963BDY_07	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI4963BDY-E3	VISHAY	获取价格	Transistor,
SI4963BDY-T1	VISHAY	获取价格	Dual P-Channel 2.5-V (G-S) MOSFET
SI4963BDY-T1-E3	VISHAY	获取价格	MOSFET 2P-CH 20V 4.9A 8-SOIC
SI4963BDY-T1-GE3	VISHAY	获取价格	MOSFET 2P-CH 20V 4.9A 8SOIC
SI4963DY	FAIRCHILD	获取价格	Dual P-Channel 2.5V Specified PowerTrench MOSFET
SI4963DY_NL	FAIRCHILD	获取价格	暂无描述
SI4963DYD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Me
SI4963DY-E3	VISHAY	获取价格	Transistor,
SI4963DYF011	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.2A I(D), 20V, 0.033ohm, 2-Element, P-Channel, Silicon, Me