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SI4948BEY-T1-E3 PDF预览

SI4948BEY-T1-E3

更新时间: 2024-09-15 22:27:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管光电二极管PC
页数 文件大小 规格书
5页 73K
描述
Dual P-Channel 60-V (D-S) 175 MOSFET

SI4948BEY-T1-E3 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOT包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.16
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:184134Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:8-Pin Narrow SOICSamacsys Released Date:2015-04-13 16:59:11
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):2.4 A
最大漏源导通电阻:0.12 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管元件材料:SILICONBase Number Matches:1

SI4948BEY-T1-E3 数据手册

 浏览型号SI4948BEY-T1-E3的Datasheet PDF文件第2页浏览型号SI4948BEY-T1-E3的Datasheet PDF文件第3页浏览型号SI4948BEY-T1-E3的Datasheet PDF文件第4页浏览型号SI4948BEY-T1-E3的Datasheet PDF文件第5页 
Si4948BEY  
Vishay Siliconix  
New Product  
Dual P-Channel 60-V (D-S) 175_ MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.120 @ V = 10 V  
3.1  
2.8  
GS  
60  
0.150 @ V = 4.5 V  
GS  
S
1
S
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View  
D
1
D
2
Ordering Information: Si4948BEY—E3 (Lead Free)  
Si4948BEY-T1—E3 (Lead Free with Tape and Reel)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
60  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
3.1  
2.6  
2.4  
2.0  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
Pulsed Drain Current (10 ms Pulse Width)  
Continuous Source Current (Diode Conduction)  
Avalanche Current  
I
25  
A
DM  
a
I
S
2  
1.1  
I
AS  
15  
11  
L = 0.1 mH  
Single Pulse Avalanche Energy  
E
AS  
mJ  
T
= 25_C  
= 70_C  
2.4  
1.7  
1.4  
A
a
Maximum Power Dissipation  
P
W
D
T
A
0.95  
Operating Junction and Storage Temperature Range  
T , T  
J
55 to 175  
_C  
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
53  
85  
30  
62.5  
110  
37  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 72847  
S-40430—Rev. A, 15-Mar-04  
www.vishay.com  
1

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