Datasheet > SI4948BEY

SI4948BEY

更新时间： 2024-09-17 17:15:23

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	317K
描述
种类:P+P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-3.1A;Vgs(th)(V):±20;漏源导通电阻:120mΩ@-10V

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SI4948BEY 数据手册

UMW

SI4948

Dual P-Channel MOSFET

PRODUCT SUMMARY

VDS (V)=-60V

RDS(ON)

120m (VGS = -10V)

150 m (VGS = -4.5V)

RDS(ON)

P-Channel MOSFET

P-Channel MOSFE

SOP-8

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

10 s

Steady State

- 60

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_A= 25 °C

T_A= 70 °C

- 3.1

- 2.6

- 2.4

- 2.0

Continuous Drain Current (T_J= 150 °C)^a

I_D

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

- 25

Continuous Source Current (Diode Conduction)^a

Avalanche Current

- 2

- 1.1

I_AS

E_AS

L = 0.1 mH

Single Pulse Avalanche Energy

T_A= 25 °C

T_A= 70 °C

2.4

1.7

1.4

Maximum Power Dissipation^a

P_D

0.95

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

62.5

Unit

t ≤ 10 s

Maximum Junction-to-Ambient^a

R_thJA

Steady State

110

°C/W

R_thJF

Maximum Junction-to-Foot

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

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