Datasheet > SI4947DY-T1

SI4947DY-T1

更新时间： 2024-11-07 04:30:15

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	73K
描述
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

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SI4947DY-T1 数据手册

Si4947DY

Dual P-Channel 30-V (D-S) Rated MOSFET

Product Summary

V_DS(V)

r_DS(on)(W)

I_D(A)

0.085 @ V = –10 V

"3.5

"2.5

–30

0.19 @ V = –4.5 V

SO-8

Top View

P-Channel MOSFET

Absolute Maximum Ratings (T_A= 25_C Unless Otherwise Noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

–30

"20

= 25_C

= 70_C

"3.5

"2.8

"20

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

Continuous Source Current (Diode Conduction)

–1.7

= 25_C

= 70_C

2.0

Maximum Power Dissipation

1.3

Operating Junction and Storage Temperature Range

T , T

–55 to 150

stg

Thermal Resistance Ratings

Parameter

Symbol

Limit

Unit

Maximum Junction-to-Ambient

thJA

62.5

_C/W

Notes

a. Surface Mounted on FR4 Board, t v 10 sec.

Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70156.

A SPICE Model data sheet is available for this product (FaxBack document #70554).

Siliconix

S-49520—Rev. C, 18-Dec-96

12 3 4 5

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