SI4948BEY

更新时间： 2024-09-15 22:50:19

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	73K
描述
Dual P-Channel 60-V (D-S) 175 MOSFET

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SI4948BEY 数据手册

Si4948BEY

Vishay Siliconix

New Product

Dual P-Channel 60-V (D-S) 175_ MOSFET

PRODUCT SUMMARY

V_DS(V)

r_DS(on)(W)

I_D(A)

0.120 @ V = −10 V

−3.1

−2.8

−60

0.150 @ V = −4.5 V

SO-8

Top View

Ordering Information: Si4948BEY—E3 (Lead Free)

Si4948BEY-T1—E3 (Lead Free with Tape and Reel)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−60

"20

= 25_C

= 70_C

−3.1

−2.6

−2.4

−2.0

Continuous Drain Current (T = 150_C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

Avalanche Current

−25

−2

−1.1

L = 0.1 mH

Single Pulse Avalanche Energy

= 25_C

= 70_C

2.4

1.7

1.4

Maximum Power Dissipation

0.95

Operating Junction and Storage Temperature Range

T , T

−55 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 72847

S-40430—Rev. A, 15-Mar-04

www.vishay.com

12 3 4 5

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