5秒后页面跳转
SI4946EY PDF预览

SI4946EY

更新时间: 2024-11-05 22:50:19
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管脉冲光电二极管
页数 文件大小 规格书
4页 46K
描述
Dual N-Channel 60-V (D-S), 175C MOSFET

SI4946EY 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.83
最大漏极电流 (Abs) (ID):4.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0湿度敏感等级:1
最高工作温度:175 °C最低工作温度:-55 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.4 W
子类别:FET General Purpose Powers表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)Base Number Matches:1

SI4946EY 数据手册

 浏览型号SI4946EY的Datasheet PDF文件第2页浏览型号SI4946EY的Datasheet PDF文件第3页浏览型号SI4946EY的Datasheet PDF文件第4页 
Si4946EY  
Vishay Siliconix  
Dual N-Channel 60-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.055 @ V = 10 V  
4.5  
3.9  
GS  
60  
0.075 @ V = 4.5 V  
GS  
D
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
Top View  
Ordering Information: Si4946EY  
Si4946EY-T1 (with Tape and Reel)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
60  
"20  
4.5  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
3.8  
A
Pulsed Drain Current  
I
30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
2
T
= 25_C  
= 70_C  
2.4  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.7  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 70157  
S-03950—Rev. D, 26-May-03  
www.vishay.com  
2-1  
 

SI4946EY 替代型号

型号 品牌 替代类型 描述 数据表
SI4946BEY-T1-GE3 VISHAY

类似代替

Dual N-Channel 60-V (D-S) 175 °C MOSFET
SI4946EY-T1 VISHAY

类似代替

Dual N-Channel 60-V (D-S), 175C MOSFET

与SI4946EY相关器件

型号 品牌 获取价格 描述 数据表
SI4946EY-T1 VISHAY

获取价格

Dual N-Channel 60-V (D-S), 175C MOSFET
SI4946EY-T1-E3 VISHAY

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI4947ADY VISHAY

获取价格

Dual P-Channel 30-V (D-S) MOSFET
SI4947ADY_06 VISHAY

获取价格

Dual P-Channel 30-V (D-S) MOSFET
SI4947ADY-E3 VISHAY

获取价格

Transistor
SI4947ADY-T1 VISHAY

获取价格

Dual P-Channel 30-V (D-S) MOSFET
SI4947ADY-T1-GE3 VISHAY

获取价格

TRANSISTOR 3000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND
SI4947DY TEMIC

获取价格

Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 2-Element, P-Channel, Silicon,
SI4947DY VISHAY

获取价格

Dual P-Channel 30-V (D-S) Rated MOSFET
SI4947DY-T1 VISHAY

获取价格

Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, P-Channel, Silicon, Metal