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SI4946EY-T1 PDF预览

SI4946EY-T1

更新时间: 2024-09-15 22:08:55
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
4页 46K
描述
Dual N-Channel 60-V (D-S), 175C MOSFET

SI4946EY-T1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.88Is Samacsys:N
最大漏极电流 (Abs) (ID):4.5 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:175 °C峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.4 W
子类别:FET General Purpose Powers表面贴装:YES
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

SI4946EY-T1 数据手册

 浏览型号SI4946EY-T1的Datasheet PDF文件第2页浏览型号SI4946EY-T1的Datasheet PDF文件第3页浏览型号SI4946EY-T1的Datasheet PDF文件第4页 
Si4946EY  
Vishay Siliconix  
Dual N-Channel 60-V (D-S), 175_C MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.055 @ V = 10 V  
4.5  
3.9  
GS  
60  
0.075 @ V = 4.5 V  
GS  
D
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
Top View  
Ordering Information: Si4946EY  
Si4946EY-T1 (with Tape and Reel)  
S
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
60  
"20  
4.5  
DS  
GS  
V
V
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 175_C)  
I
J
D
T
A
3.8  
A
Pulsed Drain Current  
I
30  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
2
T
= 25_C  
= 70_C  
2.4  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.7  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 175  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 70157  
S-03950—Rev. D, 26-May-03  
www.vishay.com  
2-1  
 

SI4946EY-T1 替代型号

型号 品牌 替代类型 描述 数据表
SI4946BEY-T1-GE3 VISHAY

类似代替

Dual N-Channel 60-V (D-S) 175 °C MOSFET
SI4946EY VISHAY

类似代替

Dual N-Channel 60-V (D-S), 175C MOSFET

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