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SI4942DY-E3 PDF预览

SI4942DY-E3

更新时间: 2024-09-16 21:07:23
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 44K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

SI4942DY-E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.84配置:Single
最大漏极电流 (Abs) (ID):5.3 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e3湿度敏感等级:1
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.1 W
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)Base Number Matches:1

SI4942DY-E3 数据手册

 浏览型号SI4942DY-E3的Datasheet PDF文件第2页浏览型号SI4942DY-E3的Datasheet PDF文件第3页浏览型号SI4942DY-E3的Datasheet PDF文件第4页浏览型号SI4942DY-E3的Datasheet PDF文件第5页 
Si4942DY  
Vishay Siliconix  
Dual N-Channel 40-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
APPLICATIONS  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.021 @ V = 10 V  
7.4  
6.4  
GS  
D Low Power Synchronous Rectifier  
D Automotive 12-V Systems  
40  
0.028 @ V = 4.5 V  
GS  
D
1
D
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
1
2
2
1
2
3
4
8
7
6
5
G
G
2
1
G
Top View  
Ordering Information: Si4942DY  
Si4942DY-T1 (with Tape and Reel)  
S
1
S
2
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
40  
DS  
GS  
V
V
"20  
T
= 25_C  
= 70_C  
7.4  
5.8  
5.3  
4.3  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
Pulsed Drain Current  
I
30  
25  
A
DM  
Avalanche Current  
L = 0.1 mH  
I
AS  
a
Continuous Source Current (Diode Conduction)  
I
1.8  
2.1  
1.3  
0.9  
1.1  
0.7  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
50  
90  
28  
60  
110  
34  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
Document Number: 71887  
www.vishay.com  
S-03950—Rev. B, 16-May-03  
1
 

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