Datasheet > SI4946BEY

SI4946BEY

更新时间： 2024-11-06 06:11:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	126K
描述
Dual N-Channel 60-V (D-S) 175 ˚C MOSFET

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SI4946BEY 数据手册

Si4946BEY

Vishay Siliconix

New Product

Dual N-Channel 60-V (D-S) 175 _C MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D 175_C Maximum Junction Temperature

D 100% R_gTested

V_DS(V)

r_DS(on)(W)

I_D(A)

Q_g(Typ)

0.041 @ V = 10 V

6.5

5.8

9.2 nC

0.052 @ V = 4.5 V

SO-8

Top View

Ordering Information: Si4946BEY-T1—E3 (Lead (Pb)-Free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

6.5

= 25_C

= 70_C

= 25_C

= 70_C

5.5

Continuous Drain Current (T = 150__C)

a, b

5.3

a, b

4.4

Pulsed Drain Current

= 25_C

3.1

Continuous Source-Drain Diode Current

a, b

Avalanche Current

7.2

3.7

2.6

L = 0.1 mH

Single-Pulse Avalanche Energy

= 25_C

= 70_C

= 25_C

= 70_C

Maximum Power Dissipation

a, b

2.4

a, b

1.7

Operating Junction and Storage Temperature Range

T , T

−50 to 175

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

a, c

Maximum Junction-to-Ambient

t p 10 sec

62.5

thJA

thJF

C/W

Maximum Junction-to-Foot (Drain)

Steady State

Notes:

a. Surface Mounted on 1” x 1” FR4 Board.

b. t = 10 sec

c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

d. Maximum under steady state conditions is 110 _C/W.

Document Number: 73411

S-51013—Rev. A, 23-May-05

www.vishay.com

12 3 4 5 6 7

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