SI4943BDY

更新时间： 2024-09-15 22:33:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
5页	57K
描述
Dual P-Channel 20-V (D-S) MOSFET

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SI4943BDY 数据手册

Si4943BDY

Vishay Siliconix

New Product

Dual P-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

D 100% R_gTested

APPLICATIONS

V_DS(V)

r_DS(on)(W)

I_D(A)

0.019 @ V = −10 V

−8.4

−6.7

−20

D Load Switching

0.031 @ V = −4.5

− Computer

− Game Systems

D Battery Switching

− 2-Cell Li-Ion

SO-8

Top View

Ordering Information: Si4943BDY—E3

Si4943BDY-T1—E3 (with Tape and Reel)

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

10 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

−20

"20

= 25_C

= 70_C

−6.3

−5.1

−8.4

−6.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current

−30

Continuous Source Current (Diode Conduction)

−1.7

2.0

−0.9

1.1

= 25_C

= 70_C

Maximum Power Dissipation

1.3

0.7

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 10 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

_C/W

Maximum Junction-to-Foot (Drain)

thJF

Notes

a. Surface Mounted on 1 ” x 1” FR4 Board.

Document Number: 73073

S-41527—Rev. A, 16-Aug-04

www.vishay.com

12 3 4 5

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