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SI4933DY

更新时间: 2024-11-08 22:33:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 46K
描述
Dual P-Channel 12-V (D-S) MOSFET

SI4933DY 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:compliant
风险等级:5.83最大漏极电流 (Abs) (ID):7.4 A
最大漏极电流 (ID):7.4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-609代码:e0工作模式:ENHANCEMENT MODE
最高工作温度:150 °C极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):2 W子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)

SI4933DY 数据手册

 浏览型号SI4933DY的Datasheet PDF文件第2页浏览型号SI4933DY的Datasheet PDF文件第3页浏览型号SI4933DY的Datasheet PDF文件第4页浏览型号SI4933DY的Datasheet PDF文件第5页 
Si4933DY  
Vishay Siliconix  
New Product  
Dual P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D TrenchFETr Power MOSFET  
VDS (V)  
rDS(on) (W)  
ID (A)  
D Advanced High Cell Density Process  
APPLICATIONS  
0.014 @ V  
= -4.5 V  
-9.8  
- 8.9  
- 7.8  
GS  
D Load Switching  
-12  
0.017 @ V = -2.5  
V
V
GS  
0.022 @ V = -1.8  
GS  
S
1
S
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
1
1
2
2
G
G
2
1
7
6
5
G
Top View  
D
1
D
2
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
V
-12  
DS  
V
"8  
GS  
T
= 25_C  
= 70_C  
-7.4  
-5.9  
- 9.8  
-7.8  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
-30  
DM  
a
continuous Source Current (Diode Conduction)  
I
-1.7  
2.0  
1.3  
-0.9  
1.1  
0.7  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
45  
85  
26  
62.5  
110  
35  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1 ” x 1” FR4 Board.  
Document Number: 71980  
S-22122—Rev. B, 25-Nov-02  
www.vishay.com  
1

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