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SI4933DY-T1-E3 PDF预览

SI4933DY-T1-E3

更新时间: 2024-11-09 19:48:11
品牌 Logo 应用领域
威世 - VISHAY 开关光电二极管晶体管
页数 文件大小 规格书
6页 111K
描述
TRANSISTOR 7400 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal

SI4933DY-T1-E3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:8.62配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:12 V最大漏极电流 (Abs) (ID):7.4 A
最大漏极电流 (ID):7.4 A最大漏源导通电阻:0.014 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4933DY-T1-E3 数据手册

 浏览型号SI4933DY-T1-E3的Datasheet PDF文件第2页浏览型号SI4933DY-T1-E3的Datasheet PDF文件第3页浏览型号SI4933DY-T1-E3的Datasheet PDF文件第4页浏览型号SI4933DY-T1-E3的Datasheet PDF文件第5页浏览型号SI4933DY-T1-E3的Datasheet PDF文件第6页 
Si4933DY  
Vishay Siliconix  
Dual P-Channel 12-V (D-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
Halogen-free According to IEC 61249-2-21  
VDS (V)  
RDS(on) (Ω)  
ID (A)  
- 9.8  
- 8.9  
- 7.8  
Definition  
0.014 at VGS = - 4.5 V  
0.017 at VGS = - 2.5 V  
0.022 at VGS = - 1.8 V  
TrenchFET® Power MOSFET  
Compliant to RoHS Directive 2002/95/EC  
- 12  
APPLICATIONS  
Load Switching  
S
1
S
2
SO-8  
S
1
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
G
1
G
G
2
1
S
2
G
2
Top View  
D
1
D
2
Ordering Information: Si4933DY-T1-E3 (Lead (Pb)-free)  
Si4933DY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
10 s  
Steady State  
Unit  
VDS  
Drain-Source Voltage  
Gate-Source Voltage  
- 12  
8
V
VGS  
TA = 25 °C  
TA = 70 °C  
- 9.8  
- 7.8  
- 7.4  
- 5.9  
Continuous Drain Current (TJ = 150 °C)a  
ID  
A
IDM  
IS  
Pulsed Drain Current  
- 30  
Continuous Source Current (Diode Conduction)a  
- 1.7  
2.0  
- 0.9  
1.1  
TA = 25 °C  
TA = 70 °C  
Maximum Power Dissipationa  
PD  
W
1.3  
0.7  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 55 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
45  
Maximum  
62.5  
Unit  
t 10 s  
Maximum Junction-to-Ambienta  
RthJA  
Steady State  
Steady State  
85  
110  
°C/W  
RthJF  
Maximum Junction-to-Foot (Drain)  
26  
35  
Notes:  
a. Surface Mounted on 1" x 1" FR4 board.  
Document Number: 71980  
S09-0867-Rev. D, 18-May-09  
www.vishay.com  
1

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