是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.9 | 最大漏极电流 (Abs) (ID): | 7.4 A |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-609代码: | e0 |
最高工作温度: | 150 °C | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 子类别: | Other Transistors |
表面贴装: | YES | 端子面层: | Tin/Lead (Sn/Pb) |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI4927DY-E3 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 7.4A I(D), 30V, 0.028ohm, 2-Element, P-Channel, Silicon, Me | |
SI4927DY-T1 | VISHAY |
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Transistor, | |
SI4927DY-T1-E3 | VISHAY |
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Power Field-Effect Transistor, 7.4A I(D), 30V, 0.028ohm, 2-Element, P-Channel, Silicon, Me | |
SI4931DY | VISHAY |
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Dual P-Channel 12-V (D-S) MOSFET | |
SI4931DY_05 | VISHAY |
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Dual P-Channel 12-V (D-S) MOSFET | |
SI4931DY-E3 | VISHAY |
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Dual P-Channel 12-V (D-S) MOSFET | |
SI4931DY-T1 | VISHAY |
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Dual P-Channel 12-V (D-S) MOSFET | |
SI4931DY-T1-E3 | VISHAY |
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Dual P-Channel 12-V (D-S) MOSFET | |
SI4931DY-T1-GE3 | VISHAY |
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Trans MOSFET P-CH 12V 6.7A 8-Pin SOIC N T/R | |
Si4932DY | VISHAY |
获取价格 |
Dual N-Channel 30-V (D-S) MOSFET |