Datasheet > SI4925DYS62Z

SI4925DYS62Z

更新时间： 2024-11-07 10:30:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	70K
描述
Power Field-Effect Transistor, 6A I(D), 30V, 0.032ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

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SI4925DYS62Z 数据手册

January 2001

Si4925DY

Dual P-Channel, Logic Level, PowerTrench^âMOSFET

General Description

Features

-6 A, -30 V. R_DS(ON)= 0.032 W @ V_GS= -10 V,

These P-Channel Logic Level MOSFETs are produced

using Fairchild Semiconductor's advanced PowerTrench

process that has been especially tailored to minimize the

on-state resistance and yet maintain low gate charge for

superior switching performance.

_DS(ON)= 0.045 W @ V_GS= -4.5 V.

Low gate charge (14.5nC typical).

High performance trench technology for extremely low

R_DS(ON)

These devices are well suited for notebook computer

applications: load switching and power management,

battery charging circuits, and DC/DC conversion.

High power and current handling capability.

SuperSOT^TM-6

SuperSOT^TM-8

SOIC-16

SOT-23

SO-8

SOT-223

pin 1

SO-8

Absolute Maximum Ratings

T_A= 25^oC unless otherwise noted

Symbol Parameter

Si4925DY

Units

Drain-Source Voltage

-30

V_DSS

V_GSS

I_D

Gate-Source Voltage

Drain Current - Continuous

- Pulsed

±20

(Note 1a)

-6

-20

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

1.6

P_D

(Note 1a)

(Note 1b)

(Note 1c)

0.9

T_J,T_STG

Operating and Storage Temperature Range

-55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Ambient (Note 1a)

Thermal Resistance, Junction-to-Case

°C/W

R_q_JA

R_q_JC

(Note 1)

Si4925DY Rev.A

12 3 4 5

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