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SI4925BDY-T1-E3 PDF预览

SI4925BDY-T1-E3

更新时间: 2024-09-16 06:11:35
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
6页 96K
描述
Dual P-Channel 30-V (D-S) MOSFET

SI4925BDY-T1-E3 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Not Recommended零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:6.97
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:5319Samacsys Pin Count:8
Samacsys Part Category:Integrated CircuitSamacsys Package Category:Small Outline Packages
Samacsys Footprint Name:8-Pin Narrow SOICSamacsys Released Date:2015-04-16 09:48:08
Is Samacsys:N配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):5.3 A
最大漏极电流 (ID):5.3 A最大漏源导通电阻:0.025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

SI4925BDY-T1-E3 数据手册

 浏览型号SI4925BDY-T1-E3的Datasheet PDF文件第2页浏览型号SI4925BDY-T1-E3的Datasheet PDF文件第3页浏览型号SI4925BDY-T1-E3的Datasheet PDF文件第4页浏览型号SI4925BDY-T1-E3的Datasheet PDF文件第5页浏览型号SI4925BDY-T1-E3的Datasheet PDF文件第6页 
Si4925BDY  
Vishay Siliconix  
Dual P-Channel 30-V (D-S) MOSFET  
FEATURES  
D TrenchFETr Power MOSFET  
PRODUCT SUMMARY  
D Advanced High Cell Density  
VDS (V)  
rDS(on) (W)  
ID (A)  
Process  
Pb-free  
Available  
0.025 @ V = 10 V  
APPLICATIONS  
7.1  
5.5  
GS  
30  
0.041 @ V = 4.5  
V
D Load Switches  
Notebook PCs  
Desktop PCs  
Game Stations  
GS  
S
1
S
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
D
1
D
2
Top View  
P-Channel MOSFET  
P-Channel MOSFET  
Ordering Information: Si4925BDY  
Si4925BDY—T1 (with Tape and Reel)  
Si4925BDY—E3 (Lead (Pb)-Free)  
Si4925BDY-T1—E3 (Lead (Pb)-Free) with Tape and Reel)  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
30  
DS  
V
V
GS  
"20  
T
= 25_C  
= 70_C  
5.3  
4.3  
7.1  
5.7  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
40  
a
continuous Source Current (Diode Conduction)  
I
1.7  
2.0  
0.9  
1.1  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.3  
0.7  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
50  
85  
30  
62.5  
110  
40  
a
Maximum Junction-to-Ambient  
R
R
thJA  
_C/W  
Maximum Junction-to-Foot (Drain)  
thJF  
Notes  
a. Surface Mounted on 1 ” x 1” FR4 Board.  
Document Number: 72001  
S-50366—Rev. C, 28-Feb-05  
www.vishay.com  
1

SI4925BDY-T1-E3 替代型号

型号 品牌 替代类型 描述 数据表
SI4925BDY VISHAY

类似代替

Dual P-Channel 30-V (D-S) MOSFET
SI4925BDY-E3 VISHAY

功能相似

Dual P-Channel 30-V (D-S) MOSFET

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