Datasheet > SI4916DY

SI4916DY

更新时间： 2024-11-06 09:26:03

品牌	Logo	应用领域
威世 - VISHAY		肖特基二极管
页数	文件大小	规格书
13页	261K
描述
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

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SI4916DY 数据手册

Si4916DY

Vishay Siliconix

Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

Available

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

0.018 at V_GS= 10 V

0.023 at V_GS= 4.5 V

0.018 at V_GS= 10 V

0.022 at V_GS= 4.5 V

•

LITTLE FOOT^®Plus Integrated Schottky

100 % R_gTested

Channel-1

Channel-2

6.6

8.5

10.5

9.3

8.9

APPLICATIONS

•

DC/DC Converters

- Notebook

SCHOTTKY PRODUCT SUMMARY

V_SD(V)

Diode Forward Voltage

V_DS(V)

I_F(A)

0.50 V at 1.0 A

2.0

SO-8

N-Channel 1

MOSFET

S /D

Schottky Diode

Top View

Si4916DY-T1-E3 (Lead (Pb)-free)

N-Channel 2

MOSFET

Ordering Information:

Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Channel-1

Channel-2

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

10.5

8.3

_C= 70 °C

_A= 25 °C

Continuous Drain Current (T_J= 150 °C)^{a, b}

I_D

7.5^{a, b, c}

7.8^{a, b, c}

6^{a ,b, c}

6.3^{a, b, c}

T_A= 70 °C

I_DM

I_S

Pulsed Drain Current (10 µs Pulse Width)

Continuous Source-Drain Diode Current

_C= 25 °C

3.2

1.7^{a, b, c}

1.8^{a, b, c}

T_A= 25 °C

I_SM

I_AS

PulseD Source-Drain Current

Single-Pulse Avalanche Current

Single-Pulse Avalanche Energy

L = 0.1 mH

T_C= 25 °C

E_AS

11.2

3.3

2.1

3.5

2.2

_C= 70 °C

_A= 25 °C

Maximum Power Dissipation^{a, b}

P_D

1.9^{a, b, c}

1.2^{a, b, c}

2.0^{a, b, c}

1.3^{a, b, c}

T_A= 70 °C

T_J, T_stg

Operating Junction and Storage Temperature Range

- 55 to 150

°C

Notes:

a. Based on T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

Document Number: 74331

S09-0540-Rev. B, 06-Apr-09

www.vishay.com

12 3 4 5 6 7...13

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