Datasheet > SI4909DY

SI4909DY

更新时间： 2024-09-18 12:19:11

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	273K
描述
Dual P-Channel 40 V (D-S) MOSFET

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Si4909DY

Vishay Siliconix

Dual P-Channel 40 V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

I_D(A)^d

- 8

V_DS(V)

R_DS(on)()

Q_g(Typ.)

Definition

TrenchFET^®Power MOSFET

100 % R_gTested

0.027 at V_GS= - 10 V

0.034 at V_GS= - 4.5 V

•

- 40

21.7 nC

- 7.2

100 % UIS Tested

• Compliant to RoHS Directive 2002/95/EC

APPLICATIONS

SO-8

•

Load Switches

- Notebook PCs

- Desktop PCs

Top View

Ordering Information: Si4909DY-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)

Parameter

Symbol

Limit

- 40

Unit

V_DS

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C= 25 °C

_C= 70 °C

- 8.0

- 6.5

Continuous Drain Current (T_J= 150 °C)

I_D

- 6.4^{a, b}

- 5.1^{a, b}

T_A= 25 °C

T_A= 70 °C

- 30^e

I_DM

I_S

Pulsed Drain Current

- 2.6

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

- 1.6^{a, b}

- 20

I_AS

Avalanche Current

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

3.2

2.1

P_D

Maximum Power Dissipation

2.0^{a, b}

1.28^{a, b}

- 55 to 150

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

Unit

R_thJA

R_thJF

t 10 s

Steady State

62.5

°C/W

Maximum Junction-to-Foot

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under steady state conditions is 110 °C/W.

d. Based on T_C= 25 °C.

e. Limited by package.

Document Number: 67077

S10-2603-Rev. A, 15-Nov-10

www.vishay.com

12 3 4 5 6 7...10

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