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PSMN085-150K,518 PDF预览

PSMN085-150K,518

更新时间: 2024-09-16 19:28:55
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 96K
描述
N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin

PSMN085-150K,518 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SOIC包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:5.16配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:150 V最大漏极电流 (ID):3.5 A
最大漏源导通电阻:0.085 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e4湿度敏感等级:2
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3.5 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN085-150K,518 数据手册

 浏览型号PSMN085-150K,518的Datasheet PDF文件第2页浏览型号PSMN085-150K,518的Datasheet PDF文件第3页浏览型号PSMN085-150K,518的Datasheet PDF文件第4页浏览型号PSMN085-150K,518的Datasheet PDF文件第5页浏览型号PSMN085-150K,518的Datasheet PDF文件第6页浏览型号PSMN085-150K,518的Datasheet PDF文件第7页 
PSMN085-150K  
N-channel enhancement mode field-effect transistor  
Rev. 01 — 16 January 2001  
Product specification  
1. Description  
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve  
the lowest possible on-state resistance in a SOT96-1 (SO8) package.  
Product availability:  
PSMN085-150K in SOT96-1 (SO8).  
2. Features  
Very low on-state resistance  
Fast switching  
TrenchMOS™ technology.  
3. Applications  
DC to DC convertor  
Computer motherboards  
Switch mode power supplies.  
c
c
4. Pinning information  
Table 1: Pinning - SOT96-1, simplified outline and symbol  
Pin  
Description  
source (s)  
gate (g)  
Simplified outline  
Symbol  
1,2,3  
4
d
s
8
5
5,6,7,8  
drain (d)  
g
1
4
MBB076  
Top view  
MBK187  
SOT96-1 (SO8)  
1. SiliconMAX is a trademark of Royal Philips Electronics.  
2. TrenchMOS is a trademark of Royal Philips Electronics.  
 
 
 

PSMN085-150K,518 替代型号

型号 品牌 替代类型 描述 数据表
PSMN085-150K NXP

完全替代

N-channel enhancement mode field-effect transistor
FDS2570 FAIRCHILD

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150V N-Channel PowerTrench MOSFET
HUF75831SK8T FAIRCHILD

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3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET

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