Datasheet > PSMN165-200K,118

PSMN165-200K,118

更新时间： 2024-09-15 15:48:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
12页	213K
描述
N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin

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技术参数
数据手册

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PSMN165-200K,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	SOIC
针数：	8	Reach Compliance Code：	unknown
风险等级：	5.7	Is Samacsys：	N
Base Number Matches：	1

PSMN165-200K,118 数据手册

PSMN165-200K

N-channel TrenchMOS SiliconMAX standard level FET

Rev. 02 — 3 December 2009

Product data sheet

1. Product profile

1.1 General description

SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in

a plastic package using TrenchMOS technology. This product is designed and qualified for

use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

Low conduction losses due to low

Suitable for high frequency

applications due to fast switching

characteristics

on-state resistance

1.3 Applications

Computer motherboards

DC-to-DC convertors

Switched-mode power supplies

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

drain-source voltage T_j≥ 25 °C; T_j≤ 150 °C

Min

Typ

Max Unit

V_DS

I_D

200

2.9

drain current

T_sp= 80 °C;

see Figure 1 and 3

P_tot

total power

dissipation

T_sp= 80 °C;

see Figure 2

3.5

Dynamic characteristics

Q_GDgate-drain charge

V_GS= 10 V; I_D= 3 A;

V_DS= 100 V; T_j= 25 °C;

see Figure 11

16.5 nC

Static characteristics

R_DSon

drain-source

on-state resistance

V_GS= 10 V; I_D= 2.5 A;

T_j= 25 °C;

130

165

mΩ

see Figure 9 and 10

12 3 4 5 6 7...12

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