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NTTD1P02R2/D PDF预览

NTTD1P02R2/D

更新时间： 2024-02-05 04:59:19
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其他 - ETC /
页数 文件大小 规格书
8页 92K
描述
Power MOSFET -1.45 Amps， -20 Volts

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NTTD1P02R2/D 数据手册

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NTTD1P02R2  
Product Preview  
Power MOSFET  
-1.45 Amps, -20 Volts  
P–Channel Enhancement Mode  
Dual Micro8 Package  
http://onsemi.com  
Features  
• Ultra Low R  
DS(on)  
–1.45 AMPERES  
–20 VOLTS  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
• Miniature Dual Micro8 Surface Mount Package  
• Diode Exhibits High Speed, Soft Recovery  
• Micro8 Mounting Information Provided  
160 mW @ VGS = –4.5  
Applications  
Dual P–Channel  
• Power Management in Portable and Battery–Powered Products, i.e.:  
Computers, Printers, PCMCIA Cards, Cellular and Cordless  
Telephones  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
G
Rating  
Symbol  
Value  
Unit  
Drain–to–Source Voltage  
V
–20  
V
V
S
DSS  
Gate–to–Source Voltage – Continuous  
V
"8.0  
GS  
Thermal Resistance –  
Junction–to–Ambient (Note 1.)  
R
P
I
I
250  
0.50  
–1.45  
–1.15  
–10  
°C/W  
W
A
A
A
θ
JA  
8
Total Power Dissipation @ T = 25°C  
A
D
Continuous Drain Current @ T = 25°C  
A
D
1
Continuous Drain Current @ T = 70°C  
A
D
Pulsed Drain Current (Note 3.)  
I
DM  
Micro8  
CASE 846A  
STYLE 2  
Thermal Resistance –  
Junction–to–Ambient (Note 2.)  
Total Power Dissipation @ T = 25°C  
R
P
125  
1.0  
°C/W  
W
θ
JA  
A
D
Continuous Drain Current @ T = 25°C  
I
I
–2.04  
–1.64  
–16  
A
A
A
A
D
Continuous Drain Current @ T = 70°C  
A
D
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Pulsed Drain Current (Note 3.)  
I
DM  
Operating and Storage  
Temperature Range  
T , T  
–55 to  
+150  
°C  
J
stg  
1
2
3
4
Drain 1  
Drain 1  
Drain 2  
Drain 2  
8
7
6
5
Source 1  
Gate 1  
Source 2  
Single Pulse Drain–to–Source Avalanche  
E
AS  
35  
mJ  
YWW  
BC  
Energy – Starting T = 25°C  
J
Gate 2  
(V = –20 Vdc, V = –4.5 Vdc,  
DD  
GS  
Peak I = –3.5 Apk, L = 5.6 mH,  
L
(Top View)  
= Year  
WW = Work Week  
BC = Device Code  
R
= 25 Ω)  
G
Maximum Lead Temperature for Soldering  
Purposes for 10 seconds  
T
L
260  
°C  
Y
1. Minimum FR–4 or G–10 PCB, Steady State.  
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single  
sided), Steady State.  
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
ORDERING INFORMATION  
This document contains information on a product under development. ON Semiconductor  
reserves the right to change or discontinue this product without notice.  
Device  
NTTD1P02R2  
Package  
Shipping  
4000/Tape & Reel  
Micro8  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
November, 2000 – Rev. 0  
NTTD1P02R2/D  
12345678

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