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NTTD4401F_07

更新时间： 2024-01-19 04:19:28
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
8页 86K
描述
Power MOSFET and Schottky Diode

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NTTD4401F_07 数据手册

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NTTD4401F  
FETKYt Power MOSFET  
and Schottky Diode  
−20 V, −3.3 A P−Channel with 20 V,  
1.0 A Schottky Diode, Micro8t Package  
http://onsemi.com  
The FETKY product family incorporates low R  
, true logic level  
DS(on)  
MOSFET PRODUCT SUMMARY  
MOSFETs packaged with industry leading, low forward drop, low  
leakage Schottky Barrier Diodes to offer high efficiency components in  
a space saving configuration. Independent pinouts for TMOS and  
Schottky die allow the flexibility to use a single component for  
switching and rectification functions in a wide variety of applications.  
V
R
DS(on)  
Typ  
I
Max  
(BR)DSS  
D
70 mW @ −4.5 V  
100 mW @ −2.7 V  
−3.3 A  
−2.7 A  
−20 V  
Features  
SCHOTTKY DIODE SUMMARY  
• Low V and Low Leakage Schottky Diode  
F
V
Max  
I
Max  
V Max  
F
R
F
• Lower Component Placement and Inventory Costs along with Board  
Space Savings  
20 V  
2.0 A  
600 mV @ I = 2.0 A  
F
A
S
• Logic Level Gate Drive – Can be Driven by Logic ICs  
• Pb−Free Package is Available  
Applications  
• Buck Converter  
G
• Synchronous Rectification  
• Low Voltage Motor Control  
D
P−Channel MOSFET  
C
• Load Management in Battery Packs, Chargers, Cell Phones, and  
other Portable Products  
Schottky Diode  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
MARKING DIAGRAM &  
PIN ASSIGNMENT  
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
−20  
−10  
3.3  
Unit  
V
V
DSS  
C C D D  
8
V
V
GS  
8
Continuous Drain  
Current (Note 1)  
T = 25°C  
I
A
A
D
T = 100°C  
A
2.1  
WW  
BG G  
G
1
Power Dissipation  
(Note 1)  
Steady T = 25°C  
P
1.42  
W
A
A
D
D
State  
Micro8  
CASE 846A  
Continuous Drain  
Current (Note 2)  
T = 25°C  
A
I
2.4  
1.5  
D
1
T = 100°C  
A
A A S G  
Power Dissipation  
(Note 2)  
Steady T = 25°C  
P
0.78  
W
A
A
BG  
WW  
G
= Specific Device Code  
= Work Week  
= Pb−Free Package  
State  
Pulsed Drain  
Current  
t = 10 ms  
I
10  
DM  
(Note: Microdot may be in either location)  
Operating Junction and  
T , T  
−55 to  
150  
°C  
mJ  
°C  
J
STG  
Storage Temperature  
Single Pulse Drain−to−Source Avalanche  
EAS  
150  
ORDERING INFORMATION  
Energy Starting T = 25°C (t v 10 s)  
A
†
Device  
Package  
Shipping  
Lead Temperature for Soldering Purposes  
T
L
260  
(1/8″ from case for 10 s)  
NTTD4401FR2  
Micro8  
4000/Tape & Reel  
4000/Tape & Reel  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Surface−mounted on FR4 board using 1 in sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
Micro8  
(Pb−Free)  
NTTD4401FR2G  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Surface−mounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.172 in sq).  
©
Semiconductor Components Industries, LLC, 2007  
1
Publication Order Number:  
January, 2007 − Rev. 5  
NTTD4401F/D  
 
12345678

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