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NTTD4401FR2 PDF预览

NTTD4401FR2

更新时间： 2024-02-11 21:01:38
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
8页 107K
描述
FETKY Power MOSFET and Schottky Diode

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NTTD4401FR2 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：not_compliantECCN代码：EAR99
风险等级：5.18其他特性：LOGIC LEVEL COMPATIBLE
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：2.4 A最大漏极电流 (ID)：2.4 A
最大漏源导通电阻：0.09 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)：175 pFJESD-30 代码：R-PDSO-G8
JESD-609代码：e0湿度敏感等级：1
元件数量：1端子数量：8
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：240
极性/信道类型：P-CHANNEL最大功率耗散 (Abs)：1.42 W
认证状态：Not Qualified子类别：Other Transistors
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：30晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NTTD4401FR2 数据手册

 浏览型号NTTD4401FR2的Datasheet PDF文件第2页浏览型号NTTD4401FR2的Datasheet PDF文件第3页浏览型号NTTD4401FR2的Datasheet PDF文件第4页浏览型号NTTD4401FR2的Datasheet PDF文件第5页浏览型号NTTD4401FR2的Datasheet PDF文件第6页浏览型号NTTD4401FR2的Datasheet PDF文件第7页 
NTTD4401F  
FETKYtPower MOSFET  
and Schottky Diode  
−20 V, −3.3 A P−Channel with 20 V,  
1.0 A Schottky Diode, Micro8t Package  
The FETKY product family incorporates low RDS(on), true logic  
level MOSFETs packaged with industry leading, low forward drop, low  
leakage Schottky Barrier Diodes to offer high efficiency components in  
a space saving configuration. Independent pinouts for TMOS and  
Schottky die allow the flexibility to use a single component for  
switching and rectification functions in a wide variety of applications.  
http://onsemi.com  
MOSFET PRODUCT SUMMARY  
V
R
Typ  
DS(on)  
I
Max  
(BR)DSS  
D
70 mW @ −4.5 V  
100 mW @ −2.7 V  
−3.3 A  
−2.7 A  
−20 V  
Features  
• Low V and Low Leakage Schottky Diode  
• Lower Component Placement and Inventory Costs along with Board  
Space Savings  
F
SCHOTTKY DIODE SUMMARY  
V
R
Max  
I Max  
F
V Max  
F
20 V  
2.0 A  
600 mV @ I = 2.0 A  
• Logic Level Gate Drive – Can be Driven by Logic ICs  
F
Applications  
A
• Buck Converter  
S
• Synchronous Rectification  
• Low Voltage Motor Control  
• Load Management in Battery Packs, Chargers, Cell Phones, and  
G
other Portable Products  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
D
C
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
−20  
−10  
3.3  
Unit  
V
V
DSS  
P−Channel MOSFET  
SCHOTTKY DIODE  
V
GS  
V
Continuous Drain  
Current (Note 1)  
I
D
A
T = 25°C  
8
A
Micro8  
CASE 846A  
T = 100°C  
A
2.1  
1
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
1.42  
W
A
A
D
MARKING DIAGRAM  
& PIN CONNECTIONS  
Continuous Drain  
Current (Note 2)  
I
D
T = 25°C  
A
2.4  
1.5  
T = 100°C  
A
ANODE  
1
2
8
7
6
5
CATHODE  
CATHODE  
Power Dissipation  
(Note 2)  
Steady T = 25°C  
P
D
0.78  
W
A
A
ANODE  
State  
YWW  
BG  
SOURCE  
GATE  
DRAIN  
DRAIN  
3
4
Pulsed Drain  
Current  
t = 10 ms  
I
10  
−55 to 150  
150  
DM  
Operating Junction and Storage  
Temperature  
T , T  
°C  
mJ  
J
STG  
(Top View)  
= Year  
Y
Single Pulse Drain−to−Source  
Avalanche Energy  
EAS  
WW = Work Week  
BG = Device Code  
Starting T = 25°C (t v 10 s)  
A
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
Device  
NTTD4401FR2  
Package  
Shipping†  
4000/Tape & Reel  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
Micro8  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
1. Surface−mounted on FR4 board using 1 inch sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface−mounted on FR4 board using the minimum recommended pad size  
(Cu area = 0.172 in sq).  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 3  
NTTD4401F/D  
 
12345678

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