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NTTD4401FB2

更新时间： 2024-02-01 01:09:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
12页 125K
描述
TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.4A I(D),SO

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中文翻译

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NTTD4401FB2 技术参数

生命周期：Active包装说明：,
Reach Compliance Code：compliant风险等级：5.61
配置：Single最大漏极电流 (Abs) (ID)：2.4 A
FET 技术：METAL-OXIDE SEMICONDUCTOR工作模式：ENHANCEMENT MODE
最高工作温度：150 °C极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：1.42 W子类别：Other Transistors
表面贴装：YESBase Number Matches：1

NTTD4401FB2 数据手册

 浏览型号NTTD4401FB2的Datasheet PDF文件第2页浏览型号NTTD4401FB2的Datasheet PDF文件第3页浏览型号NTTD4401FB2的Datasheet PDF文件第4页浏览型号NTTD4401FB2的Datasheet PDF文件第5页浏览型号NTTD4401FB2的Datasheet PDF文件第6页浏览型号NTTD4401FB2的Datasheet PDF文件第7页 
NTTD4401F  
FETKYtPower MOSFET  
and Schottky Diode  
FETKY, Micro8t Package  
−20 V, −3.3 A P−Channel with 20 V,  
1.0 A Schottky Rectifier  
The FETKY product family incorporates low RDS(on), true logic  
level MOSFETs packaged with industry leading, low forward drop,  
low leakage Schottky Barrier rectifiers to offer high efficiency  
components in a space saving configuration. Independent pinouts for  
TMOS and Schottky die allow the flexibility to use a single  
component for switching and rectification functions in a wide variety  
of applications.  
http://onsemi.com  
MOSFET PRODUCT SUMMARY  
V
R
Typ  
DS(on)  
I
Max  
(BR)DSS  
D
70 mW @ −4.5 V  
100 mW @ −2.7 V  
−3.3 A  
−2.7 A  
−20 V  
Features  
SCHOTTKY DIODE SUMMARY  
• Low V and Low Leakage Schottky Rectifier  
• Lower Component Placement and Inventory Costs along with Board  
Space Savings  
F
V
R
Max  
I Max  
F
V Typ  
F
20 V  
2.0 A  
58 mV @ I = 2.0 A  
F
• Logic Level Gate Drive – Can be Driven by Logic ICs  
Applications  
A
S
• Buck Converter  
• Synchronous Rectification  
• Low Voltage Motor Control  
G
• Load Management in Battery Packs, Chargers, Cell Phones, and  
other Portable Products  
D
C
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
P−Channel MOSFET  
SCHOTTKY DIODE  
Rating  
Drain−to−Source Voltage  
Gate−to−Source Voltage  
Symbol  
Value  
−20  
−10  
3.3  
Unit  
V
V
DSS  
8
Micro8  
CASE 846A  
V
GS  
V
1
Continuous Drain  
Current (Note 1)  
I
D
A
T = 25°C  
A
T = 100°C  
A
2.1  
MARKING DIAGRAM  
& PIN CONNECTIONS  
Power Dissipation  
(Note 1)  
Steady T = 25°C  
State  
P
D
1.42  
W
A
A
ANODE  
1
2
8
7
6
5
CATHODE  
CATHODE  
Continuous Drain  
Current (Note 2)  
I
D
T = 25°C  
2.4  
1.5  
A
ANODE  
YWW  
BG  
T = 100°C  
A
SOURCE  
GATE  
DRAIN  
DRAIN  
3
4
Power Dissipation  
(Note 2)  
Steady T = 25°C  
State  
P
D
0.78  
W
A
A
Pulsed Drain  
Current  
t = 10 ms  
I
10  
−55 to 150  
150  
DM  
(Top View)  
= Year  
Y
Operating Junction and Storage  
Temperature  
T , T  
°C  
mJ  
J
STG  
WW = Work Week  
BG = Device Code  
Single Pulse Drain−to−Source  
Avalanche Energy  
EAS  
ORDERING INFORMATION  
Starting T = 25°C (t v 10 s)  
A
Device  
NTTD4401FB2  
Package  
Shipping†  
4000/Tape & Reel  
Lead Temperature for Soldering Purposes  
T
L
260  
°C  
(1/8″ from case for 10 s)  
Micro8  
1. Surface−mounted on FR4 board using 1 inch sq pad size  
(Cu area = 1.127 in sq [1 oz] including traces).  
2. Surface−mounted on FR4 board using the minimum recommended pad size  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
(Cu area = 0.172 in sq).  
Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2003 − Rev. 0  
NTTD4401F/D  
1234567...12

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