Datasheet > NTTD1P02R2_06

NTTD1P02R2_06

更新时间： 2024-02-22 13:07:19

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	148K
描述
Power MOSFET -1.45 Amps, -20 Volts

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NTTD1P02R2_06 数据手册

NTTD1P02R2

Power MOSFET

−1.45 Amps, −20 Volts

P−Channel Enhancement Mode

Dual Micro8t Package

http://onsemi.com

Features

−1.45 AMPERES

−20 VOLTS

160 mW @ V_GS= −4.5

• Ultra Low R

DS(on)

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature Dual Micro8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Micro8 Mounting Information Provided

• Pb−Free Package is Available

Dual P−Channel

Applications

• Power Management in Portable and Battery−Powered Products,

i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless

Telephones

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM &

Rating

Symbol

Value

Unit

PIN ASSIGNMENT

D1 D1 D2 D2

Drain−to−Source Voltage

DSS

−20

Gate−to−Source Voltage − Continuous

"8.0

Thermal Resistance −

Junction−to−Ambient (Note 1)

250

0.50

−1.45

−1.15

−10

°C/W

Total Power Dissipation @ T = 25°C

BCG

Continuous Drain Current @ T = 25°C

Micro8

Continuous Drain Current @ T = 70°C

CASE 846A

STYLE 2

Pulsed Drain Current (Note 3)

Thermal Resistance −

S1 G1 S2 G2

Junction−to−Ambient (Note 2)

125

1.0

−2.04

−1.64

−16

°C/W

Total Power Dissipation @ T = 25°C

= Specific Device Code

= Work Week

= Pb−Free Package

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 3)

Operating and Storage

Temperature Range

T , T

−55 to

+150

°C

(Note: Microdot may be in either location)

stg

ORDERING INFORMATION

Single Pulse Drain−to−Source Avalanche

EAS

Energy − Starting T = 25°C

(V = −20 Vdc, V = −4.5 Vdc,

†

Device

Package

Shipping

Peak I = −3.5 Apk, L = 5.6 mH,

= 25 W)

NTTD1P02R2

Micro8

4000/Tape & Reel

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

260

°C

NTTD1P02R2G

Micro8

(Pb−Free)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Minimum FR−4 or G−10 PCB, Steady State.

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

2. Mounted onto a 2” square FR−4 Board

(1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State.

3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

Publication Order Number:

March, 2006 − Rev. 2

NTTD1P02R2/D

12 3 4 5 6

中文翻译

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与NTTD1P02R2_06相关器件

型号	品牌	获取价格	描述	数据表
NTTD1P02R2G	ONSEMI	获取价格	Power MOSFET -1.45 Amps, -20 Volts
NTTD2P02R2	ETC	获取价格	TRANSISTOR \| MOSFET \| MATCHED PAIR \| P-CHANNEL \| 20V V(BR)DSS \| 2.4A I(D) \| TSSOP
NTTD2P02R2/D	ETC	获取价格	Power MOSFET -2.4 Amps， -20 Volts
NTTD4401F	ONSEMI	获取价格	FETKY Power MOSFET and Schottky Diode
NTTD4401F_07	ONSEMI	获取价格	Power MOSFET and Schottky Diode
NTTD4401FB2	ONSEMI	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.4A I(D),SO
NTTD4401FR2	ONSEMI	获取价格	FETKY Power MOSFET and Schottky Diode
NTTD4401FR2G	ONSEMI	获取价格	Power MOSFET and Schottky Diode
NTTD4401FR2G	ROCHESTER	获取价格	2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8
NTTFD018N08LC	ONSEMI	获取价格	MOSFET, Power, 80V POWERTRENCH® Power Clip Ha

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