5秒后页面跳转
捷配首页

Datasheet > NTTD2P02R2/D
NTTD2P02R2/D PDF预览

NTTD2P02R2/D

更新时间： 2024-01-21 18:11:39
品牌 Logo 应用领域
其他 - ETC /
页数 文件大小 规格书
8页 86K
描述
Power MOSFET -2.4 Amps， -20 Volts

阅读下载

中文翻译

获取价格

NTTD2P02R2/D 数据手册

 浏览型号NTTD2P02R2/D的Datasheet PDF文件第2页浏览型号NTTD2P02R2/D的Datasheet PDF文件第3页浏览型号NTTD2P02R2/D的Datasheet PDF文件第4页浏览型号NTTD2P02R2/D的Datasheet PDF文件第5页浏览型号NTTD2P02R2/D的Datasheet PDF文件第6页浏览型号NTTD2P02R2/D的Datasheet PDF文件第7页 
NTTD2P02R2  
Power MOSFET  
-2.4 Amps, -20 Volts  
Dual P–Channel Micro8  
Features  
• Ultra Low R  
DS(on)  
http://onsemi.com  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
• Miniature Micro–8 Surface Mount Package  
• Diode Exhibits High Speed, Soft Recovery  
• Micro8 Mounting Information Provided  
–2.4 AMPERES  
–20 VOLTS  
R
= 90 mW  
DS(on)  
Applications  
• Power Management in Portable and Battery–Powered Products, i.e.:  
Cellular and Cordless Telephones and PCMCIA Cards  
P–Channel  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
Drain–to–Source Voltage  
V
–20  
V
V
DSS  
Gate–to–Source Voltage – Continuous  
V
"8.0  
GS  
G
Thermal Resistance –  
Junction–to–Ambient (Note 1.)  
R
P
D
I
I
160  
0.78  
–2.4  
–1.92  
–20  
°C/W  
W
A
A
A
θJA  
S
Total Power Dissipation @ T = 25°C  
A
Continuous Drain Current @ T = 25°C  
A
D
D
Continuous Drain Current @ T = 70°C  
A
MARKING  
Pulsed Drain Current (Note 3.)  
I
DM  
DIAGRAM  
Thermal Resistance –  
Junction–to–Ambient (Note 2.)  
Total Power Dissipation @ T = 25°C  
Continuous Drain Current @ T = 25°C  
Continuous Drain Current @ T = 70°C  
Pulsed Drain Current (Note 3.)  
8
R
P
D
I
I
88  
1.42  
–3.25  
–2.6  
–30  
°C/W  
W
A
A
A
θJA  
A
1
A
A
D
D
YWW  
BE  
Micro8  
CASE 846A  
STYLE 2  
I
DM  
T , T  
Operating and Storage  
Temperature Range  
–55 to  
+150  
°C  
J
stg  
Single Pulse Drain–to–Source Avalanche  
E
AS  
350  
mJ  
Energy – Starting T = 25°C  
Y
= Year  
J
(V  
= –20 Vdc, V  
= –4.5 Vdc,  
WW  
BE  
= Work Week  
= Device Code  
DD  
GS  
Peak I = –5.0 Apk, L = 28 mH,  
L
R
= 25 Ω)  
G
Maximum Lead Temperature for Soldering  
Purposes for 10 seconds  
T
L
260  
°C  
PIN ASSIGNMENT  
1. Minimum FR–4 or G–10 PCB, Steady State.  
2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz Cu 0.06″ thick single  
sided), Steady State.  
Source 1  
1
8
7
Drain 1  
Drain 1  
Drain 2  
Drain 2  
2
Gate 1  
Source 2  
Gate 2  
3
4
6
5
3. Pulse Test: Pulse Width ꢀ 300 ms, Duty Cycle ꢀ 2%.  
Top View  
ORDERING INFORMATION  
Device  
Package  
Shipping  
4000/Tape & Reel  
NTTD2P02R2  
Micro8  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
December, 2000 – Rev. 0  
NTTD2P02R2/D  
12345678

中文翻译

下载PDF

与NTTD2P02R2/D相关器件

型号 品牌 获取价格 描述 数据表
NTTD4401F ONSEMI

获取价格

 		FETKY Power MOSFET and Schottky Diode
NTTD4401F_07 ONSEMI

获取价格

 		Power MOSFET and Schottky Diode
NTTD4401FB2 ONSEMI

获取价格

 		TRANSISTOR,MOSFET,P-CHANNEL,20V V(BR)DSS,2.4A I(D),SO
NTTD4401FR2 ONSEMI

获取价格

 		FETKY Power MOSFET and Schottky Diode
NTTD4401FR2G ONSEMI

获取价格

 		Power MOSFET and Schottky Diode
NTTD4401FR2G ROCHESTER

获取价格

 		2400mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 846A-02, MICRO-8
NTTFD018N08LC ONSEMI

获取价格

 		MOSFET, Power, 80V POWERTRENCH® Power Clip Ha
NTTFD021N08C ONSEMI

获取价格

 		MOSFET, Power, 80V POWERTRENCH® Power Clip Ha
NTTFD022N10C ONSEMI

获取价格

 		MOSFET, Power, 100V POWERTRENCH® Power Clip H
NTTFD1D8N02P1E ONSEMI

获取价格

 		MOSFET, Power, 25V Dual N-Channel Power Clip

与NTTD2P02R2/D相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证