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NTTD1P02R2G PDF预览

NTTD1P02R2G

更新时间： 2024-02-16 04:10:08
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 148K
描述
Power MOSFET -1.45 Amps, -20 Volts

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中文翻译

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NTTD1P02R2G 技术参数

是否Rohs认证： 符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-PDSO-G8针数：8
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.79其他特性：LOGIC LEVEL COMPATIBLE
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：1.45 A最大漏极电流 (ID)：1.45 A
最大漏源导通电阻：0.16 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：0.5 W认证状态：Not Qualified
子类别：Other Transistors表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：40
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

NTTD1P02R2G 数据手册

 浏览型号NTTD1P02R2G的Datasheet PDF文件第2页浏览型号NTTD1P02R2G的Datasheet PDF文件第3页浏览型号NTTD1P02R2G的Datasheet PDF文件第4页浏览型号NTTD1P02R2G的Datasheet PDF文件第5页浏览型号NTTD1P02R2G的Datasheet PDF文件第6页 
NTTD1P02R2  
Power MOSFET  
−1.45 Amps, −20 Volts  
P−Channel Enhancement Mode  
Dual Micro8t Package  
http://onsemi.com  
Features  
−1.45 AMPERES  
−20 VOLTS  
160 mW @ VGS = −4.5  
• Ultra Low R  
DS(on)  
• Higher Efficiency Extending Battery Life  
• Logic Level Gate Drive  
• Miniature Dual Micro8 Surface Mount Package  
• Diode Exhibits High Speed, Soft Recovery  
• Micro8 Mounting Information Provided  
• Pb−Free Package is Available  
Dual P−Channel  
D
Applications  
• Power Management in Portable and Battery−Powered Products,  
i.e.: Computers, Printers, PCMCIA Cards, Cellular and Cordless  
Telephones  
G
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING DIAGRAM &  
Rating  
Symbol  
Value  
Unit  
PIN ASSIGNMENT  
D1 D1 D2 D2  
Drain−to−Source Voltage  
V
DSS  
−20  
V
V
8
Gate−to−Source Voltage − Continuous  
V
GS  
"8.0  
8
Thermal Resistance −  
Junction−to−Ambient (Note 1)  
R
250  
0.50  
−1.45  
−1.15  
−10  
°C/W  
W
q
P
D
D
D
JA  
WW  
1
Total Power Dissipation @ T = 25°C  
A
BCG  
Continuous Drain Current @ T = 25°C  
I
A
A
A
Micro8  
G
Continuous Drain Current @ T = 70°C  
I
A
CASE 846A  
STYLE 2  
Pulsed Drain Current (Note 3)  
I
A
DM  
1
Thermal Resistance −  
S1 G1 S2 G2  
Junction−to−Ambient (Note 2)  
R
125  
1.0  
−2.04  
−1.64  
−16  
°C/W  
W
q
JA  
Total Power Dissipation @ T = 25°C  
P
D
A
BC  
WW  
G
= Specific Device Code  
= Work Week  
= Pb−Free Package  
Continuous Drain Current @ T = 25°C  
I
I
A
A
A
D
D
Continuous Drain Current @ T = 70°C  
A
Pulsed Drain Current (Note 3)  
I
A
DM  
Operating and Storage  
Temperature Range  
T , T  
−55 to  
+150  
°C  
(Note: Microdot may be in either location)  
J
stg  
ORDERING INFORMATION  
Single Pulse Drain−to−Source Avalanche  
EAS  
35  
mJ  
Energy − Starting T = 25°C  
J
(V = −20 Vdc, V = −4.5 Vdc,  
DD  
GS  
†
Device  
Package  
Shipping  
Peak I = −3.5 Apk, L = 5.6 mH,  
L
R
= 25 W)  
G
NTTD1P02R2  
Micro8  
4000/Tape & Reel  
4000/Tape & Reel  
Maximum Lead Temperature for Soldering  
Purposes for 10 seconds  
T
L
260  
°C  
NTTD1P02R2G  
Micro8  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. Minimum FR−4 or G−10 PCB, Steady State.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. Mounted onto a 2” square FR−4 Board  
(1 in sq, 2 oz Cu 0.06″ thick single sided), Steady State.  
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.  
© Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
March, 2006 − Rev. 2  
NTTD1P02R2/D  
123456

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