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NTMD4184PFR2G PDF预览

NTMD4184PFR2G

更新时间: 2024-09-15 06:00:43
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
7页 99K
描述
Power MOSFET and Schottky Diode -30 V, -4.0 A, Single P-Channel with 20 V, 2.2 A, Schottky Barrier Diode

NTMD4184PFR2G 数据手册

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NTMD4184PF  
Power MOSFET and  
Schottky Diode  
-30 V, -4.0 A, Single P-Channel with 20 V,  
2.2ꢀA, Schottky Barrier Diode  
Features  
ꢀFETKYt Surface Mount Package Saves Board Space  
http://onsemi.com  
ꢀIndependent Pin-Out for MOSFET and Schottky Allowing for  
Design Flexibility  
P-CHANNEL MOSFET  
ꢀLow R  
MOSFET and Low V Schottky to Minimize  
F
V
R
Max  
DS(on)  
DS(on)  
I Max  
D
(BR)DSS  
Conduction Losses  
95 mW @ -10 V  
-30 V  
-4.0 A  
ꢀOptimized Gate Charge to Minimize Switching Losses  
165 mW @ -4.5 V  
ꢀThis is a Pb-Free Device  
Applications  
SCHOTTKY DIODE  
ꢀDisk Drives  
ꢀDC-DC Converters  
ꢀPrinters  
V
Max  
V Max  
F
I Max  
F
R
20 V  
0.58 V  
2.2 A  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
A
S
Rating  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain  
Symbol  
Value  
-30  
20  
Unit  
V
V
DSS  
V
GS  
V
T = 25°C  
I
D
-3.3  
-2.6  
1.6  
A
G
A
Current R  
(Note 1)  
q
JA  
T = 70°C  
A
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
D
W
A
D
C
R
q
JA  
P-Channel MOSFET  
Schottky Diode  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
I
D
-2.3  
-1.8  
0.77  
q
JA  
T = 70°C  
A
Steady  
State  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
W
A
D
R
q
JA  
Continuous Drain  
Current R  
(Note 1)  
T = 25°C  
A
-4.0  
-3.2  
2.31  
D
C
C D D  
t < 10 s  
q
JA  
8
T = 70°C  
A
4184PF  
AYWW  
G
SOIC-8  
CASE 751  
STYLE 18  
Power Dissipation  
t < 10 s (Note 1)  
T = 25°C  
A
P
D
W
A
8
R
q
JA  
1
1
Pulsed Drain Current  
T = 25°C,  
A
t = 10 ms  
I
-10  
DM  
A
A S G  
p
Operating Junction and Storage Temperature  
Source Current (Body Diode)  
T , T  
J
-55 to  
+150  
°C  
STG  
4184PF = Device Code  
A
= Assembly Location  
= Year  
= Work Week  
Y
I
S
-1.3  
260  
A
WW  
G
Lead Temperature for Soldering Purposes  
(1/8from case for 10 s)  
T
L
°C  
= Pb-Free Package  
SCHOTTKY MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
ORDERING INFORMATION  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
20  
20  
V
V
A
RRM  
V
R
Device  
NTMD4184PFR2G  
Package  
Shipping  
Average Rectified Forward  
Current, (Note 1)  
Steady  
State  
I
F
2.2  
SOIC-8 2500/Tape & Reel  
(Pb-Free)  
t < 10 s  
3.2  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©ꢀ Semiconductor Components Industries, LLC, 2008  
March, 2008 - Rev. 0  
1
Publication Order Number:  
NTMD4184PF/D  

NTMD4184PFR2G 替代型号

型号 品牌 替代类型 描述 数据表
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