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NTMD4884NFR2G PDF预览

NTMD4884NFR2G

更新时间： 2024-11-20 06:00:47
品牌 Logo 应用领域
安森美 - ONSEMI 肖特基二极管
页数 文件大小 规格书
7页 92K
描述
Power MOSFET and Schottky Diode

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中文翻译

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NTMD4884NFR2G 数据手册

 浏览型号NTMD4884NFR2G的Datasheet PDF文件第2页浏览型号NTMD4884NFR2G的Datasheet PDF文件第3页浏览型号NTMD4884NFR2G的Datasheet PDF文件第4页浏览型号NTMD4884NFR2G的Datasheet PDF文件第5页浏览型号NTMD4884NFR2G的Datasheet PDF文件第6页浏览型号NTMD4884NFR2G的Datasheet PDF文件第7页 
NTMD4884NF  
Power MOSFET and  
Schottky Diode  
30 V, 5.7 A, Single N-Channel with 30 V,  
2.8 A, Schottky Barrier Diode  
Features  
•ꢀFETKYt Surface Mount Package Saves Board Space  
http://onsemi.com  
•ꢀIndependent Pin-Out for MOSFET and Schottky Allowing for  
Design Flexibility  
N-CHANNEL MOSFET  
•ꢀLow R  
MOSFET and Low V Schottky to Minimize  
F
V
R
Max  
DS(on)  
I Max  
D
(BR)DSS  
DS(on)  
Conduction Losses  
48 mW @ 10 V  
70 mW @ 4.5 V  
30 V  
5.7 A  
•ꢀOptimized Gate Charge to Minimize Switching Losses  
•ꢀThis is a Pb-Free Device  
Applications  
SCHOTTKY DIODE  
•ꢀDisk Drives  
•ꢀDC-DC Converters  
•ꢀPrinters  
V
Max  
V Max  
F
I Max  
F
R
30 V  
0.5 V  
2.8 A  
MOSFET MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
A
S
Rating  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Continuous Drain  
Symbol  
Value  
30  
Unit  
V
V
DSS  
V
GS  
20  
V
T = 25°C  
I
D
4.7  
3.8  
1.6  
A
G
A
Current R  
(Note 1)  
q
JA  
T = 70°C  
A
Power Dissipation  
(Note 1)  
T = 25°C  
A
P
D
W
A
D
C
R
q
JA  
N-Channel MOSFET  
Schottky Diode  
Continuous Drain  
Current R (Note 2)  
T = 25°C  
A
I
D
3.3  
2.6  
q
JA  
T = 70°C  
A
Steady  
State  
MARKING DIAGRAM  
& PIN ASSIGNMENT  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
I
0.77  
W
A
D
R
q
JA  
Continuous Drain  
Current R  
(Note 1)  
T = 25°C  
A
5.7  
4.5  
2.3  
D
C
C D D  
t < 10 s  
q
JA  
8
T = 70°C  
A
4884NF  
AYWW  
G
SOIC-8  
CASE 751  
STYLE 18  
Power Dissipation  
t < 10 s (Note 1)  
T = 25°C  
A
P
D
W
A
8
R
q
JA  
1
1
Pulsed Drain Current  
T = 25°C,  
A
t = 10 ms  
I
19  
DM  
A
A S G  
p
Operating Junction and Storage Temperature  
Source Current (Body Diode)  
T , T  
J
-55 to  
+150  
°C  
STG  
4884NF = Device Code  
A
= Assembly Location  
= Year  
= Work Week  
Y
I
S
1.3  
A
WW  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
260  
°C  
L
= Pb-Free Package  
SCHOTTKY MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
ORDERING INFORMATION  
Peak Repetitive Reverse Voltage  
DC Blocking Voltage  
V
30  
30  
V
V
A
RRM  
V
†
R
Device  
Package  
Shipping  
Average Rectified Forward  
Current, (Note 1)  
Steady  
State  
I
F
2.8  
NTMD4884NFR2G SOIC-8 2500/Tape & Reel  
(Pb-Free)  
t < 10 s  
4.1  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©ꢀ Semiconductor Components Industries, LLC, 2008  
March, 2008 - Rev. 0  
1
Publication Order Number:  
NTMD4884NF/D  
1234567

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