是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT |
包装说明: | LEAD FREE, CASE 751-07, SOIC-8 | 针数: | 8 |
Reach Compliance Code: | unknown | 风险等级: | 5.38 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 3.3 A | 最大漏源导通电阻: | 0.048 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 42 pF |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | NOT SPECIFIED | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | COMMERCIAL |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NTMD4N03 | ONSEMI |
获取价格 |
Power MOSFET 4 A, 30 V, NâChannel SOâ8 Du | |
NTMD4N03R2 | ONSEMI |
获取价格 |
Power MOSFET 4 Amps, 30 Volts N−Channel SO−8 Dual | |
NTMD4N03R2G | ONSEMI |
获取价格 |
Power MOSFET 4 A, 30 V, NâChannel SOâ8 Du | |
NTMD5836NL | ONSEMI |
获取价格 |
Power MOSFET 40 V, Dual N?Channel, SOIC?8 Optimized Gate Charge | |
NTMD5836NLR2G | ONSEMI |
获取价格 |
Power MOSFET 40 V, Dual N?Channel, SOIC?8 Optimized Gate Charge | |
NTMD5838NL | ONSEMI |
获取价格 |
Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Optimized Gate Charge | |
NTMD5838NLR2G | ONSEMI |
获取价格 |
Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Optimized Gate Charge | |
NTMD6601NR2G | ONSEMI |
获取价格 |
Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8 | |
NTMD6N02R2 | ONSEMI |
获取价格 |
Power MOSFET 6.0 Amps, 20 Volts | |
NTMD6N02R2/D | ETC |
获取价格 |
Power MOSFET 6.0 Amps, 20 Volts |