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NTMD6N04R2 PDF预览

NTMD6N04R2

更新时间： 2024-01-05 15:50:55
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
5页 79K
描述
Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

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NTMD6N04R2 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：SOT包装说明：ROHS COMPLIANT, CASE 751-07, SOIC-8
针数：8Reach Compliance Code：unknown
风险等级：5.44雪崩能效等级（Eas）：245 mJ
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：40 V
最大漏极电流 (ID)：4.6 A最大漏源导通电阻：0.034 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-PDSO-G8
JESD-609代码：e3湿度敏感等级：NOT SPECIFIED
元件数量：2端子数量：8
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：29 A认证状态：COMMERCIAL
表面贴装：YES端子面层：MATTE TIN
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：40晶体管应用：SWITCHING
晶体管元件材料：SILICON

NTMD6N04R2 数据手册

 浏览型号NTMD6N04R2的Datasheet PDF文件第2页浏览型号NTMD6N04R2的Datasheet PDF文件第3页浏览型号NTMD6N04R2的Datasheet PDF文件第4页浏览型号NTMD6N04R2的Datasheet PDF文件第5页 
NTMD6N04R2  
Power MOSFET  
40 V, 5.8 A, Dual N-Channel SOIC-8  
Features  
•ꢀDesigned for use in low voltage, high speed switching applications  
•ꢀUltra Low On-Resistance Provides  
http://onsemi.com  
Higher Efficiency and Extends Battery Life  
ꢁ- R  
ꢁ- R  
= 0.027 W, V = 10 V (Typ)  
GS  
= 0.034 W, V = 4.5 V (Typ)  
DS(on)  
DS(on)  
V
DSS  
R
DS(ON)  
Typ  
I Max  
D
GS  
40 V  
27 mW @ V = 10 V  
GS  
5.8 A  
•ꢀMiniature SOIC-8 Surface Mount Package Saves Board Space  
•ꢀDiode is Characterized for Use in Bridge Circuits  
•ꢀDiode Exhibits High Speed, with Soft Recovery  
•ꢀPb-Free Package is Available  
N-Channel  
D
D
Applications  
•ꢀDC-DC Converters  
•ꢀComputers  
G
G
•ꢀPrinters  
•ꢀCellular and Cordless Phones  
•ꢀDisk Drives and Tape Drives  
S
S
MARKING DIAGRAM &  
PIN ASSIGNMENT  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
D1 D1 D2 D2  
8
Drain-to-Source Voltage  
V
DSS  
40  
V
V
8
Gate-to-Source Voltage - Continuous  
Drain Current (Note 1)  
V
GS  
"20  
1
E6N04  
AYWWꢀG  
G
SOIC-8  
CASE 751  
STYLE 11  
- Continuous @ T = 25°C  
I
D
5.8  
29  
Adc  
Apk  
A
- Single Pulse (tp ≤ 10 ms)  
I
DM  
1
Drain Current (Note 2)  
- Continuous @ T = 25°C  
I
D
4.6  
Adc  
S1 G1 S2 G2  
A
Total Power Dissipation  
@ T = 25°C (Note 1)  
P
D
W
E6N04 = Specific Device Code  
A
2.0  
1.29  
A
= Assembly Location  
= Year  
@ T = 25°C (Note 2)  
A
Y
WW  
Operating and Storage Temperature  
Range  
T , T  
J
-55 to +150  
245  
°C  
stg  
= Work Week  
= Pb-Free Package  
G
(Note: Microdot may be in either location)  
Single Pulse Drain-to-Source Avalanche  
Energy - Starting T = 25°C  
E
AS  
mJ  
J
(V = 40 Vdc, V = 5.0 Vdc,  
DD GS  
Vdc, Peak I = 7.0 Apk,  
L
L = 10 mH, R = 25 W)  
ORDERING INFORMATION  
G
Thermal Resistance  
- Junction-to-Ambient (Note 1)  
- Junction-to-Ambient (Note 2)  
R
°C/W  
°C  
q
†
JA  
Device  
NTMD6N04R2G  
Package  
Shipping  
2500/Tape & Reel  
62.5  
97  
SOIC-8  
(Pb-Free)  
Maximum Lead Temperature for  
Soldering Purposes for 10 Sec  
T
260  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s  
2. When surface mounted to an FR4 board using 1″ pad size, t = steady state  
©ꢀ Semiconductor Components Industries, LLC, 2007  
December, 2007 - Rev. 0  
1
Publication Order Number:  
NTMD6N04R2/D  
 
12345

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