NTMD6N04R2

更新时间： 2024-11-20 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	79K
描述
Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

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NTMD6N04R2 数据手册

NTMD6N04R2

Power MOSFET

40 V, 5.8 A, Dual N-Channel SOIC-8

Features

•ꢀDesigned for use in low voltage, high speed switching applications

•ꢀUltra Low On-Resistance Provides

http://onsemi.com

Higher Efficiency and Extends Battery Life

ꢁ- R

= 0.027 W, V = 10 V (Typ)

= 0.034 W, V = 4.5 V (Typ)

DS(on)

DSS

DS(ON)

Typ

I Max

40 V

27 mW @ V = 10 V

5.8 A

•ꢀMiniature SOIC-8 Surface Mount Package Saves Board Space

•ꢀDiode is Characterized for Use in Bridge Circuits

•ꢀDiode Exhibits High Speed, with Soft Recovery

•ꢀPb-Free Package is Available

N-Channel

Applications

•ꢀDC-DC Converters

•ꢀComputers

•ꢀPrinters

•ꢀCellular and Cordless Phones

•ꢀDisk Drives and Tape Drives

MARKING DIAGRAM &

PIN ASSIGNMENT

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

D1 D1 D2 D2

Drain-to-Source Voltage

DSS

Gate-to-Source Voltage - Continuous

Drain Current (Note 1)

"20

E6N04

AYWWꢀG

SOIC-8

CASE 751

STYLE 11

- Continuous @ T = 25°C

5.8

Adc

Apk

- Single Pulse (tp ≤ 10 ms)

Drain Current (Note 2)

- Continuous @ T = 25°C

4.6

Adc

S1 G1 S2 G2

Total Power Dissipation

@ T = 25°C (Note 1)

E6N04 = Specific Device Code

2.0

1.29

= Assembly Location

= Year

@ T = 25°C (Note 2)

Operating and Storage Temperature

Range

T , T

-55 to +150

245

°C

stg

= Work Week

= Pb-Free Package

(Note: Microdot may be in either location)

Single Pulse Drain-to-Source Avalanche

Energy - Starting T = 25°C

(V = 40 Vdc, V = 5.0 Vdc,

DD GS

Vdc, Peak I = 7.0 Apk,

L = 10 mH, R = 25 W)

ORDERING INFORMATION

Thermal Resistance

- Junction-to-Ambient (Note 1)

- Junction-to-Ambient (Note 2)

°C/W

°C

†

Device

NTMD6N04R2G

Package

Shipping

2500/Tape & Reel

62.5

SOIC-8

(Pb-Free)

Maximum Lead Temperature for

Soldering Purposes for 10 Sec

260

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s

2. When surface mounted to an FR4 board using 1″ pad size, t = steady state

December, 2007 - Rev. 0

Publication Order Number:

NTMD6N04R2/D

12 3 4 5

中文翻译

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与NTMD6N04R2相关器件

型号	品牌	获取价格	描述	数据表
NTMD6N04R2G	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6P02	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NTMD6P02R2	ONSEMI	获取价格	Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
NTMD6P02R2/D	ETC	获取价格	Power MOSFET 6 Amps， 20 Volts
NTMD6P02R2G	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NTMD6P02R2SG	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NT-MF161	OMRON	获取价格	Programmable Terminals
NTMFC013NP10M5L	ONSEMI	获取价格	MOSFET - Power, Dual N- & P-Channel, SO8FL,
NTMFD001N03P9	ONSEMI	获取价格	功率 Mosfet 30V POWERTRENCH® Power Clip
NTMFD016N06CT1G	ONSEMI	获取价格	Power MOSFET Power, N-Channel, DUAL SO8FL, 60

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