Datasheet > NTMD6N02R2_05

NTMD6N02R2_05

更新时间： 2024-09-26 12:33:35

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	80K
描述
Power MOSFET 6.0 Amps, 20 Volts

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NTMD6N02R2_05 数据手册

NTMD6N02R2

Power MOSFET

6.0 Amps, 20 Volts

N−Channel Enhancement Mode

Dual SO−8 Package

http://onsemi.com

Features

TYP

I MAX

DSS

DS(ON)

• Ultra Low R

DS(on)

20 V

35 mW @ V = 4.5 V

6.0 A

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature Dual SOIC−8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• SOIC−8 Mounting Information Provided

• Pb−Free Package is Available

N−Channel

Applications

• DC−DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery−Powered Products,

for example, Computers, Printers, Cellular and Cordless Telephones

and PCMCIA Cards

SOIC−8

CASE 751

STYLE 11

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

MARKING DIAGRAM

& PIN ASSIGNMENT

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 1.0 MW)

Source 1

Gate 1

Drain 1

Drain 2

Gate−to−Source Voltage − Continuous

"12

Thermal Resistance,

Junction−to−Ambient (Note 1)

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 4)

62.5

2.0

6.5

5.5

°C/W

Source 2

Gate 2

(Top View)

Thermal Resistance,

Junction−to−Ambient (Note 2)

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 4)

E6N02 = Specific Device Code

102

1.22

5.07

4.07

°C/W

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

Thermal Resistance

Junction−to−Ambient (Note 3)

172

0.73

3.92

3.14

°C/W

ORDERING INFORMATION

Total Power Dissipation @ T = 25°C

†

Device

Package

Shipping

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 4)

NTMD6N02R2

SOIC−8

2500/Tape & Reel

NTMD6N02R2G

SOIC−8

1. Mounted onto a 2 in square FR−4 Board

(1 in sq. 2 oz. Cu 0.06 in thick single sided), t < 10 seconds.

2. Mounted onto a 2 in square FR−4 Board

(1 in sq. 2 oz. Cu 0.06 in thick single sided), t = steady state.

3. Minimum FR−4 or G−10 PCB, t = steady state.

4. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

August, 2005 − Rev. 3

NTMD6N02R2/D

12 3 4 5 6

中文翻译

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与NTMD6N02R2_05相关器件

型号	品牌	获取价格	描述	数据表
NTMD6N02R2G	ONSEMI	获取价格	Power MOSFET 6.0 Amps, 20 Volts
NTMD6N03R2	ONSEMI	获取价格	Power MOSFET
NTMD6N03R2G	ONSEMI	获取价格	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NTMD6N04R2	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6N04R2G	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6P02	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NTMD6P02R2	ONSEMI	获取价格	Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
NTMD6P02R2/D	ETC	获取价格	Power MOSFET 6 Amps， 20 Volts
NTMD6P02R2G	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NTMD6P02R2SG	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,

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