Datasheet > NTMD6N02R2/D

NTMD6N02R2/D

更新时间： 2024-11-23 23:55:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
8页	88K
描述
Power MOSFET 6.0 Amps， 20 Volts

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中文翻译

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NTMD6N02R2/D 数据手册

NTMD6N02R2

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Power MOSFET

6.0 Amps, 20 Volts

N–Channel Enhancement Mode

Dual SO–8 Package

Features

http://onsemi.com

• Ultra Low R

DS(on)

6.0 AMPERES

20 VOLTS

35 mW @ V_GS= 4.5 V

• Higher Efficiency Extending Battery Life

• Logic Level Gate Drive

• Miniature Dual SO–8 Surface Mount Package

• Diode Exhibits High Speed, Soft Recovery

• Avalanche Energy Specified

• SO–8 Mounting Information Provided

N–Channel

Applications

• DC–DC Converters

• Low Voltage Motor Control

• Power Management in Portable and Battery–Powered Products, i.e.:

Computers, Printers, Cellular and Cordless Telephones and PCMCIA

Cards

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain–to–Source Voltage

DSS

Drain–to–Gate Voltage (R = 1.0 MW)

DGR

Gate–to–Source Voltage – Continuous

"12

Thermal Resistance –

Junction–to–Ambient (Note 1.)

SO–8

CASE 751

STYLE 11

62.5

2.0

6.5

5.5

°C/W

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

Continuous Drain Current @ T = 70°C

Pulsed Drain Current (Note 4.)

MARKING DIAGRAM

& PIN ASSIGNMENT

Thermal Resistance –

Junction–to–Ambient (Note 2.)

102

1.22

5.07

4.07

°C/W

Total Power Dissipation @ T = 25°C

Source 1

Gate 1

Drain 1

Drain 2

Continuous Drain Current @ T = 25°C

E6N02

LYWW

Continuous Drain Current @ T = 70°C

Source 2

Gate 2

Pulsed Drain Current (Note 4.)

Thermal Resistance –

Junction–to–Ambient (Note 3.)

172

0.73

3.92

3.14

°C/W

(Top View)

Total Power Dissipation @ T = 25°C

Continuous Drain Current @ T = 25°C

E6N02 = Device Code

Continuous Drain Current @ T = 70°C

= Assembly Location

= Year

Pulsed Drain Current (Note 4.)

1. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz. Cu 0.06″ thick single

sided), t < 10 seconds.

= Work Week

2. Mounted onto a 2″ square FR–4 Board (1″ sq. 2 oz. Cu 0.06″ thick single

sided), t = steady state.

3. Minimum FR–4 or G–10 PCB, t = steady state.

4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.

ORDERING INFORMATION

Device

NTMD6N02R2

Package

Shipping

2500/Tape & Reel

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

SO–8

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

November, 2000 – Rev. 0

NTMD6N02R2/D

12 3 4 5 6 7 8

中文翻译

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与NTMD6N02R2/D相关器件

型号	品牌	获取价格	描述	数据表
NTMD6N02R2_05	ONSEMI	获取价格	Power MOSFET 6.0 Amps, 20 Volts
NTMD6N02R2G	ONSEMI	获取价格	Power MOSFET 6.0 Amps, 20 Volts
NTMD6N03R2	ONSEMI	获取价格	Power MOSFET
NTMD6N03R2G	ONSEMI	获取价格	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NTMD6N04R2	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6N04R2G	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6P02	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NTMD6P02R2	ONSEMI	获取价格	Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
NTMD6P02R2/D	ETC	获取价格	Power MOSFET 6 Amps， 20 Volts
NTMD6P02R2G	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,

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