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NTMD6N03R2 PDF预览

NTMD6N03R2

更新时间： 2024-11-23 22:28:43
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 78K
描述
Power MOSFET

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NTMD6N03R2 数据手册

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NTMD6N03R2  
Power MOSFET  
30 V, 6 A, Dual N−Channel SO−8  
Features  
• Designed for use in low voltage, high speed switching applications  
• Ultra Low On−Resistance Provides  
Higher Efficiency and Extends Battery Life  
http://onsemi.com  
− R  
− R  
= 0.024 W, V = 10 V (Typ)  
GS  
DS(on)  
DS(on)  
V
DSS  
R
TYP  
I MAX  
D
DS(ON)  
= 0.030 W, V = 4.5 V (Typ)  
GS  
30 V  
24 mΩ @ V = 10 V  
6.0 A  
• Miniature SO−8 Surface Mount Package Saves Board Space  
• Diode is Characterized for Use in Bridge Circuits  
• Diode Exhibits High Speed, with Soft Recovery  
GS  
N−Channel  
D
D
Applications  
• Dc−Dc Converters  
• Computers  
• Printers  
G
G
• Cellular and Cordless Phones  
• Disk Drives and Tape Drives  
S
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
MARKING  
DIAGRAM  
Rating  
Symbol  
Value  
Unit  
8
Drain−to−Source Voltage  
Gate−to−Source Voltage − Continuous  
Drain Current  
V
DSS  
30  
Volts  
Volts  
1
8
V
GS  
"20  
E6N03  
LYWW  
SO−8, DUAL  
CASE 751  
STYLE 11  
− Continuous @ T = 25°C  
I
D
6.0  
30  
Adc  
Apk  
A
− Single Pulse (tp ≤ 10 ms)  
I
DM  
1
Total Power Dissipation  
P
D
Watts  
@ T = 25°C (Note 1)  
2.0  
A
@ T = 25°C (Note 2)  
1.29  
PIN ASSIGNMENTS  
A
Operating and Storage Temperature  
Range  
T , T  
−55 to  
+150  
°C  
1
2
8
7
J
stg  
Source−1  
Gate−1  
Drain−1  
Drain−1  
Drain−2  
Drain−2  
Single Pulse Drain−to−Source Avalanche  
E
AS  
325  
mJ  
3
4
6
5
Source−2  
Gate−2  
Energy − Starting T = 25°C  
J
(V = 30 Vdc, V = 5.0 Vdc,  
DD  
GS  
V
DS  
= 20 Vdc, Peak I = 9.0 Apk,  
L
(Top View)  
L = 10 mH, R = 25 Ω)  
G
Thermal Resistance  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
R
°C/W  
°C  
E6N03 = Device Code  
q
JA  
62.5  
97  
L
Y
= Assembly Location  
= Year  
WW  
= Work Week  
Maximum Lead Temperature for Soldering  
Purposes for 10 seconds  
T
260  
L
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits are  
exceeded, device functional operation is not implied, damage may occur and  
reliability may be affected.  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
NTMD6N03R2  
SO−8  
2500/Tape & Reel  
1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s  
2. When surface mounted to an FR4 board using 1″ pad size, t = steady state  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
January, 2005 − Rev. 1  
NTMD6N03R2/D  
 
12345678

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NTMD6N03R2 替代型号

型号 品牌 替代类型 描述 数据表
NTMD6N02R2G ONSEMI

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