Datasheet > NTMD6N03R2

NTMD6N03R2

更新时间： 2024-09-25 22:28:43

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
8页	78K
描述
Power MOSFET

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替代型号

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NTMD6N03R2 数据手册

NTMD6N03R2

Power MOSFET

30 V, 6 A, Dual N−Channel SO−8

Features

• Designed for use in low voltage, high speed switching applications

• Ultra Low On−Resistance Provides

Higher Efficiency and Extends Battery Life

http://onsemi.com

− R

= 0.024 W, V = 10 V (Typ)

DS(on)

DSS

TYP

I MAX

DS(ON)

= 0.030 W, V = 4.5 V (Typ)

30 V

24 mΩ @ V = 10 V

6.0 A

• Miniature SO−8 Surface Mount Package Saves Board Space

• Diode is Characterized for Use in Bridge Circuits

• Diode Exhibits High Speed, with Soft Recovery

N−Channel

Applications

• Dc−Dc Converters

• Computers

• Printers

• Cellular and Cordless Phones

• Disk Drives and Tape Drives

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING

DIAGRAM

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

Gate−to−Source Voltage − Continuous

Drain Current

DSS

Volts

"20

E6N03

LYWW

SO−8, DUAL

CASE 751

STYLE 11

− Continuous @ T = 25°C

6.0

Adc

Apk

− Single Pulse (tp ≤ 10 ms)

Total Power Dissipation

Watts

@ T = 25°C (Note 1)

2.0

@ T = 25°C (Note 2)

1.29

PIN ASSIGNMENTS

Operating and Storage Temperature

Range

T , T

−55 to

+150

°C

stg

Source−1

Gate−1

Drain−1

Drain−2

Single Pulse Drain−to−Source Avalanche

325

Source−2

Gate−2

Energy − Starting T = 25°C

(V = 30 Vdc, V = 5.0 Vdc,

= 20 Vdc, Peak I = 9.0 Apk,

(Top View)

L = 10 mH, R = 25 Ω)

Thermal Resistance

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

°C/W

°C

E6N03 = Device Code

62.5

= Assembly Location

= Year

= Work Week

Maximum Lead Temperature for Soldering

Purposes for 10 seconds

260

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

†

Device

Package

Shipping

NTMD6N03R2

SO−8

2500/Tape & Reel

1. When surface mounted to an FR4 board using 1″ pad size, t ≤ 10 s

2. When surface mounted to an FR4 board using 1″ pad size, t = steady state

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

January, 2005 − Rev. 1

NTMD6N03R2/D

12 3 4 5 6 7 8

中文翻译

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NTMD6N03R2 替代型号

型号	品牌	替代类型	描述	数据表
NTMD6N02R2G	ONSEMI	类似代替	Power MOSFET 6.0 Amps, 20 Volts
NTMD6N03R2G	ONSEMI	类似代替	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NTMD4N03R2G	ONSEMI	类似代替	Power MOSFET 4 A, 30 V, NâChannel SOâ8 Du

与NTMD6N03R2相关器件

型号	品牌	获取价格	描述	数据表
NTMD6N03R2G	ONSEMI	获取价格	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NTMD6N04R2	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6N04R2G	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6P02	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NTMD6P02R2	ONSEMI	获取价格	Power MOSFET 6 Amps, 20 Volts P-Channel SO-8, Dual
NTMD6P02R2/D	ETC	获取价格	Power MOSFET 6 Amps， 20 Volts
NTMD6P02R2G	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NTMD6P02R2SG	ONSEMI	获取价格	Power MOSFET 6 A, 20 V, PâChannel SOICâ8,
NT-MF161	OMRON	获取价格	Programmable Terminals
NTMFC013NP10M5L	ONSEMI	获取价格	MOSFET - Power, Dual N- & P-Channel, SO8FL,

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