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NTMD5836NL PDF预览

NTMD5836NL

更新时间: 2024-11-20 10:30:19
品牌 Logo 应用领域
安森美 - ONSEMI 栅极
页数 文件大小 规格书
10页 131K
描述
Power MOSFET 40 V, Dual N?Channel, SOIC?8 Optimized Gate Charge

NTMD5836NL 数据手册

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NTMD5836NL  
Power MOSFET  
40 V, Dual NChannel, SOIC8  
Features  
Asymmetrical N Channels  
http://onsemi.com  
Low R  
DS(on)  
Low Capacitance  
Optimized Gate Charge  
NChannel 1  
D1  
NChannel 2  
These Devices are PbFree, Halogen Free/BFR Free and are RoHS  
D2  
Compliant  
I
Max  
D
G1  
G2  
(Notes 1 and 2)  
V
R
Max  
DS(on)  
(BR)DSS  
Channel 1  
Channel 2  
40 V  
11 A  
12 mW @ 10 V  
16 mW @ 4.5 V  
25 mW @ 10 V  
30.8 mW @ 4.5 V  
S1  
S2  
40 V  
6.5 A  
MARKING DIAGRAM*  
AND PIN ASSIGNMENT  
1. Surfacemounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in  
sq [2 oz] including traces)  
2. Only selected channel is been powered  
D1 D1 D2 D2  
8
8
1W applied on channel 1: T = 1 W * 85°C/W + 25°C = 110°C  
J
1
5836NL  
AYWW G  
G
SOIC8  
CASE 751  
1
S1 G1 S2 G2  
A
Y
= Assembly Location  
= Year  
WW  
G
= Work Week  
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NTMD5836NLR2G SOIC8  
(PbFree)  
2500 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
March, 2011 Rev. 0  
NTMD5836NL/D  
 

NTMD5836NL 替代型号

型号 品牌 替代类型 描述 数据表
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