Datasheet > NTMD5838NL

NTMD5838NL

更新时间： 2024-09-26 10:30:19

品牌	Logo	应用领域
安森美 - ONSEMI		栅极
页数	文件大小	规格书
6页	106K
描述
Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Optimized Gate Charge

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NTMD5838NL 数据手册

NTMD5838NL

Power MOSFET

40 V, 8.9 A, 25 mW, Dual N−Channel SO−8

Features

• Low R

DS(on)

• Low Capacitance

http://onsemi.com

• Optimized Gate Charge

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAX

I MAX

(BR)DSS

DS(ON)

MAXIMUM RATINGS (T = 25°C unless otherwise stated)

25 mW @ 10 V

40 V

8.9 A

Parameter

Drain−to−Source Voltage

Gate−to−Source Voltage

Symbol

Value

Unit

30.8 mW @ 4.5 V

DSS

N−CHANNEL MOSFET

Continuous Drain

Current R

T = 25°C

7.4

5.9

2.1

1.3

8.9

7.1

3.0

1.9

T = 70°C

(Note 1)

Steady

State

Power Dissipation

T = 25°C

(Note 1)

T = 70°C

Continuous Drain

Current R

T = 25°C

T = 70°C

(Note 1)

t ≤10 s

Power Dissipation

T = 25°C

(Note 1)

MARKING DIAGRAM/

PIN ASSIGNMENT

T = 70°C

Pulsed Drain

Current

t = 10 ms

D1 D1 D2 D2

SO−8

CASE 751

STYLE 11

D5838N

AYWW

Operating Junction and Storage

Temperature

T , T

−55 to

°C

STG

+150

Source Current (Body Diode)

7.0

S1 G1 S2 G2

(Top View)

Single Pulse Drain−to−Source Avalanche

Energy (L = 0.1 mH)

EAS

IAS

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Lead Temperature for Soldering Purposes

260

°C

(1/8″ from case for 10 s)

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

(Note: Microdot may be in either location)

THERMAL RESISTANCE MAXIMUM RATINGS

ORDERING INFORMATION

Parameter

Symbol

Value

Unit

†

Device

NTMD5838NLR2G

Package

Shipping

Junction−to−Ambient Steady State

(Notes 1 & 3)

SO−8

(Pb−Free)

2500/Tape & Reel

°C/W

Junction−to−Ambient − t ≤10 s (Note 1)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

Junction−to−Ambient Steady State (Note 2)

106

1. Surface−mounted on FR4 board using 1 sq−in pad

(Cu area = 1.127 in sq [2 oz] including traces).

2. Surface−mounted on FR4 board using 0.155 in sq (100mm ) pad size.

3. Both channels receive equivalent power dissipation

1 W applied on each channel: T = 2 W * 58°C/W + 25°C = 141°C

Publication Order Number:

April, 2011 − Rev. 0

NTMD5838NL/D

12 3 4 5 6

中文翻译

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与NTMD5838NL相关器件

型号	品牌	获取价格	描述	数据表
NTMD5838NLR2G	ONSEMI	获取价格	Power MOSFET 30 V, 11.6 A, N?Channel, SO?8 Optimized Gate Charge
NTMD6601NR2G	ONSEMI	获取价格	Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8
NTMD6N02R2	ONSEMI	获取价格	Power MOSFET 6.0 Amps, 20 Volts
NTMD6N02R2/D	ETC	获取价格	Power MOSFET 6.0 Amps， 20 Volts
NTMD6N02R2_05	ONSEMI	获取价格	Power MOSFET 6.0 Amps, 20 Volts
NTMD6N02R2G	ONSEMI	获取价格	Power MOSFET 6.0 Amps, 20 Volts
NTMD6N03R2	ONSEMI	获取价格	Power MOSFET
NTMD6N03R2G	ONSEMI	获取价格	Power MOSFET 30 V, 6 A, Dual N--Channel SOIC--8
NTMD6N04R2	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8
NTMD6N04R2G	ONSEMI	获取价格	Power MOSFET 40 V, 5.8 A, Dual N-Channel SOIC-8

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