Datasheet > NTJD3158C

NTJD3158C

更新时间： 2024-09-13 06:00:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	97K
描述
Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected

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NTJD3158C 数据手册

NTJD3158C

Power MOSFET

20 V, +0.63/-0.82 A,

SC-88 Complementary, ESD Protected

Features

•ꢀComplementary N- and P-Channel MOSFET

•ꢀSmall Size Dual SC-88 Package

http://onsemi.com

•ꢀReduced Gate Charge to Improve Switching Response

•ꢀIndependently Connected Devices to Provide Design Flexibility

•ꢀThis is a Pb-Free Device

Max

I Max

(BR)DSS

DS(on)

375 mW @ 4.5 V

445 mW @ 2.5 V

300 mW @ -4.5 V

500 mW @ -2.5 V

N-Ch

20 V

0.63 A

Applications

P-Ch

-20 V

-0.82 A

•ꢀDC-DC Conversion Circuits

•ꢀLoad/Power Switching with Level Shift

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

SC-88 (SOT-363)

(6-Leads)

Parameter

Drain-to-Source Voltage

Symbol Value

Unit

DSS

Gate-to-Source Voltage

N-Ch

N-Channel

Continuous Drain

Current (Note 1)

T = 25°C

0.63

0.46

0.72

-0.82

-0.59

-0.93

0.27

0.35

1.3

Steady State

T = 85°C

t ≤ 5 s

T = 25°C

P-Ch

P-Channel

Continuous Drain

Current (Note 1)

T = 25°C

Steady State

T = 85°C

t ≤ 5 s

Steady State

t ≤ 5 s

T = 25°C

(Top View)

Power Dissipation

(Note 1)

T = 25°C

MARKING DIAGRAM &

PIN ASSIGNMENT

Pulsed Drain

Current

N-Ch

tp = 10 ms

D1 G2 S2

P-Ch

-1.6

Operating Junction and Storage Temperature

Source Current (Body Diode)

T , T

-55 to

150

°C

stg

TG MG

SC-88 (SOT-363)

CASE 419B

STYLE 26

0.46

260

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

°C

S1 G1 D2

= Specific Device Code

= Date Code

= Pb-Free Package

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Max

460

357

226

Unit

°C/W

Junction-to-Ambient – Steady State (Note 1)

Junction-to-Ambient – t ≤ 5 s (Note 1)

Junction-to-Lead (Drain) – Steady State (Note 1)

(Note: Microdot may be in either location)

ORDERING INFORMATION

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 in sq pad size

Device

Package

Shipping†

NTJD3158CT1G

SC-88

(Pb-Free)

3000/Tape & Reel

(Cu area = 1.127 in sq [1 oz] including traces).

NTJD3158CT4G

SC-88

(Pb-Free)

10000/Tape & Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

January, 2008 - Rev. 0

Publication Order Number:

NTJD3158C/D

12 3 4 5 6 7

中文翻译

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与NTJD3158C相关器件

型号	品牌	获取价格	描述	数据表
NTJD3158CT1G	ONSEMI	获取价格	Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected
NTJD3158CT2G	ONSEMI	获取价格	小信号 MOSFET，20V，630mA，375 mΩ，双互补 SC−88/SC70−6/
NTJD3158CT4G	ONSEMI	获取价格	Power MOSFET 20 V, +0.63/-0.82 A, SC-88 Complementary, ESD Protected
NTJD4001N	ONSEMI	获取价格	Small Signal MOSFET
NTJD4001NT1	ONSEMI	获取价格	Small Signal MOSFET
NTJD4001NT1G	ONSEMI	获取价格	Small Signal MOSFET
NTJD4001NT2G	ROCHESTER	获取价格	250mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 419B-02, SC-88
NTJD4001NT2G	ONSEMI	获取价格	Dual N-Channel Small Signal MOSFET 30V 250mA
NTJD4105C	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−
NTJD4105CT1	ONSEMI	获取价格	Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−

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