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NSVMMUN2217LT1G PDF预览

NSVMMUN2217LT1G

更新时间： 2024-01-12 19:04:35
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
5页 63K
描述
Digital Transistors (BRT)

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中文翻译

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NSVMMUN2217LT1G 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G3Reach Compliance Code：compliant
ECCN代码：EAR99Factory Lead Time：6 weeks
风险等级：5.78其他特性：BUILT IN BIAS RESISTANCE RATIO IS 2.13
最大集电极电流 (IC)：0.1 A集电极-发射极最大电压：50 V
配置：SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE)：35
JEDEC-95代码：TO-236ABJESD-30 代码：R-PDSO-G3
JESD-609代码：e3湿度敏感等级：1
元件数量：1端子数量：3
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE极性/信道类型：NPN
参考标准：AEC-Q101表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

NSVMMUN2217LT1G 数据手册

 浏览型号NSVMMUN2217LT1G的Datasheet PDF文件第2页浏览型号NSVMMUN2217LT1G的Datasheet PDF文件第3页浏览型号NSVMMUN2217LT1G的Datasheet PDF文件第4页浏览型号NSVMMUN2217LT1G的Datasheet PDF文件第5页 
MMUN2217L,  
NSVMMUN2217L  
Digital Transistors (BRT)  
R1 = 4.7 kW, R2 = 10 kW  
NPN Transistors with Monolithic Bias  
Resistor Network  
www.onsemi.com  
PIN CONNECTIONS  
This series of digital transistors is designed to replace a single  
device and its external resistor bias network. The Bias Resistor  
Transistor (BRT) contains a single transistor with a monolithic bias  
network consisting of two resistors; a series base resistor and a  
base−emitter resistor. The BRT eliminates these individual  
components by integrating them into a single device. The use of a BRT  
can reduce both system cost and board space.  
PIN 3  
COLLECTOR  
(OUTPUT)  
PIN 1  
BASE  
(INPUT)  
R1  
R2  
PIN 2  
EMITTER  
(GROUND)  
Features  
• Simplifies Circuit Design  
• Reduces Board Space  
• Reduces Component Count  
• NSV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
MARKING DIAGRAM  
SOT−23  
CASE 318  
STYLE 6  
AAM MG  
G
1
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
AAM  
M
Specific Device Code  
=
Date Code*  
G
=
Pb−Free Package  
MAXIMUM RATINGS (T = 25°C)  
A
(Note: Microdot may be in either location)  
Rating  
Collector−Base Voltage  
Collector−Emitter Voltage  
Collector Current − Continuous  
Input Forward Voltage  
Symbol  
Max  
50  
Unit  
Vdc  
*Date Code orientation may vary depending up-  
on manufacturing location.  
V
CBO  
CEO  
V
50  
Vdc  
ORDERING INFORMATION  
See detailed ordering, marking, and shipping information in  
the package dimensions section on page 2 of this data sheet.  
I
C
100  
20  
mAdc  
Vdc  
V
IN(fwd)  
Input Reverse Voltage  
V
IN(rev)  
7
Vdc  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 3  
DTC143X/D  
12345

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