Datasheet > 晶体管 > 小信号双极晶体管> NSVMUN2112T1G

NSVMUN2112T1G

更新时间： 2023-06-19 14:32:11

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管数字晶体管
页数	文件大小	规格书
12页	136K
描述
PNP 双极数字晶体管 (BRT)

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中文翻译

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数据手册

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NSVMUN2112T1G 数据手册

MUN5111T1 Series

Preferred Devices

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space. The device is housed in

the SC−70/SOT−323 package which is designed for low power

surface mount applications.

http://onsemi.com

PNP SILICON

BIAS RESISTOR

TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

BASE

(INPUT)

• Pb−Free Packages are Available

• Simplifies Circuit Design

• Reduces Board Space

PIN 2

EMITTER

(GROUND)

• Reduces Component Count

• The SC−70/SOT−323 package can be soldered using wave or reflow.

The modified gull−winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

• Available in 8 mm embossed tape and reel − Use the Device Number

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

SC−70/SOT−323

CASE 419

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

STYLE 3

CBO

CEO

Vdc

MARKING DIAGRAM

100

mAdc

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

= Specific Device Code

(See Order Info Table)

= Date Code

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation

202 (Note 1)

310 (Note 2)

1.6 (Note 1)

2.5 (Note 2)

T = 25°C

ORDERING INFORMATION

Derate above 25°C

°C/W

See specific ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Thermal Resistance, Junction-to-Ambient

618 (Note 1) °C/W

403 (Note 2)

Thermal Resistance, Junction-to-Lead

Junction and Storage Temperature Range

280 (Note 1) °C/W

332 (Note 2)

Preferred devices are recommended choices for future use

and best overall value.

T , T

−55 to +150

°C

stg

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 7

MUN5111T1/D

12 3 4 5 6 7...12

中文翻译

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与NSVMUN2112T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVMUN2132T1G	ONSEMI	获取价格	PNP 双极数字晶体管 (BRT)
NSVMUN2212T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 22 k, R2 = 22 k
NSVMUN2233T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 47 k
NSVMUN2236T1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
NSVMUN2237T1G	ONSEMI	获取价格	NPN Bipolar Digital Transistor (BRT)
NSVMUN5111DW1T3G	ONSEMI	获取价格	双路 PNP 双极数字晶体管 (BRT)
NSVMUN5113DW1T3G	ONSEMI	获取价格	双 PNP 双极数字晶体管 (BRT)
NSVMUN5131T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
NSVMUN5132T1G	ONSEMI	获取价格	Digital Transistors (BRT) R1 = 4.7 k, R2 = 4.7 k
NSVMUN5133DW1T1G	ONSEMI	获取价格	双 PNP 双极数字晶体管 (BRT)

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