Datasheet > 晶体管 > 小信号双极晶体管> NSVMUN5237T1G

NSVMUN5237T1G

更新时间： 2023-06-19 14:32:12

品牌	Logo	应用领域
安森美 - ONSEMI		小信号双极晶体管数字晶体管
页数	文件大小	规格书
11页	92K
描述
NPN 双极数字晶体管 (BRT)

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NSVMUN5237T1G 数据手册

DTC114EET1 Series

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base−emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC−75/SOT−416 package which is designed for low power surface

mount applications.

http://onsemi.com

NPN SILICON

BIAS RESISTOR TRANSISTORS

PIN 3

COLLECTOR

(OUTPUT)

Features

PIN 1

• Simplifies Circuit Design

BASE

(INPUT)

• Reduces Board Space

• Reduces Component Count

PIN 2

EMITTER

(GROUND)

• The SC−75/SOT−416 Package Can be Soldered Using Wave or

Reflow

• The Modified Gull−Winged Leads Absorb Thermal Stress During

Soldering Eliminating the Possibility of Damage to the Die

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

SC−75 (SOT−416)

CASE 463

Vdc

STYLE 1

100

mAdc

THERMAL CHARACTERISTICS

MARKING DIAGRAM

Rating

Symbol

Value

Unit

Total Device Dissipation,

FR−4 Board (Note 1) @ T = 25°C

Derate above 25°C

200

1.6

mW/°C

xx M G

Thermal Resistance,

Junction−to−Ambient (Note 1)

600

°C/W

Total Device Dissipation,

FR−4 Board (Note 2) @ T = 25°C

Derate above 25°C

300

2.4

mW/°C

Specific Device Code

xx = (Refer to page 2)

Date Code*

Thermal Resistance,

Junction−to−Ambient (Note 2)

400

°C/W

Pb−Free Package

Junction and Storage Temperature

Range

T , T

−55 to +150

°C

stg

(Note: Microdot may be in either location)

*Date Code orientation may vary depending

upon manufacturing location.

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ Minimum Pad

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

2. FR−4 @ 1.0 × 1.0 Inch Pad

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

March, 2006 − Rev. 8

DTC114EET1/D

12 3 4 5 6 7...11

中文翻译

下载PDF

与NSVMUN5237T1G相关器件

型号	品牌	获取价格	描述	数据表
NSVMUN5312DW1T2G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN5312DW1T3G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN531335DW1T1G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN531335DW1T3G	ONSEMI	获取价格	Complementary Bias Resistor Transistors
NSVMUN5314DW1T3G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVMUN5331DW1T1G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVMUN5332DW1T1G	ONSEMI	获取价格	Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
NSVMUN5332DW1T3G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)
NSVMUN5333DW1T1G	ONSEMI	获取价格	Dual Bias Resistor Transistors
NSVMUN5333DW1T3G	ONSEMI	获取价格	互补双极数字晶体管 (BRT)

与NSVMUN5237T1G相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

9
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

9
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

11
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

13

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVMUN5237T1G

NSVMUN5237T1G 数据手册

与NSVMUN5237T1G相关器件

与NSVMUN5237T1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NSVMUN5237T1G

NSVMUN5237T1G 数据手册

与NSVMUN5237T1G相关器件

与NSVMUN5237T1G相关文章

您还可以找

您在本页遇到什么问题？