5秒后页面跳转
NSVR02100HT1G PDF预览

NSVR02100HT1G

更新时间: 2023-09-03 20:39:21
品牌 Logo 应用领域
安森美 - ONSEMI 快速恢复二极管测试光电二极管
页数 文件大小 规格书
5页 115K
描述
肖特基势垒二极管

NSVR02100HT1G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PDSO-G2Reach Compliance Code:compliant
风险等级:1.58其他特性:LOW LEAKAGE CURRENT
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.95 VJESD-30 代码:R-PDSO-G2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:2 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.2 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大功率耗散:0.2 W参考标准:AEC-Q101
最大反向电流:0.15 µA反向测试电压:100 V
表面贴装:YES技术:SCHOTTKY
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

NSVR02100HT1G 数据手册

 浏览型号NSVR02100HT1G的Datasheet PDF文件第2页浏览型号NSVR02100HT1G的Datasheet PDF文件第3页浏览型号NSVR02100HT1G的Datasheet PDF文件第4页浏览型号NSVR02100HT1G的Datasheet PDF文件第5页 
NSR02100HT1G  
Schottky Barrier Diodes  
These Schottky barrier diodes are designed for high speed switching  
applications, circuit protection, and voltage clamping. Extremely low  
forward voltage reduces conduction loss. Miniature surface mount  
package is excellent for hand held and portable applications where  
space is limited.  
www.onsemi.com  
Features  
Fast Switching Speed  
Low Leakage Current  
100 VOLT SCHOTTKY  
BARRIER DIODE  
Low Forward Voltage − 0.45 V @ I = 1 mAdc  
F
Surface Mount Device  
Low Capacitance Diode  
NSVR Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SOD−323  
CASE 477  
STYLE 1  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
1
2
MAXIMUM RATINGS  
CATHODE  
ANODE  
Characteristic  
Symbol Value  
Unit  
Total Device Dissipation FR−5 Board,  
(Note 1)  
MARKING DIAGRAM  
P
D
T = 25°C  
200  
1.57  
mW  
mW/°C  
A
Derate above 25°C  
JCM G  
Forward Current (DC)  
I
200  
2
mA  
F
G
2
1
Non−Repetitive Peak Forward Current,  
t < 10 msec  
p
I
A
FSM  
JC  
M
G
= Device Code  
= Date Code  
= Pb−Free Package  
Thermal Resistance  
Junction−to−Ambient  
R
635  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range  
−55  
to150  
T , T  
J
(Note: Microdot may be in either location)  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR−4 Minimum Pad  
ORDERING INFORMATION  
Device  
Package  
Shipping  
NSR02100HT1G  
SOD−323  
(Pb−Free)  
3,000 /  
Tape & Reel  
NSVR02100HT1G SOD−323  
(Pb−Free)  
3,000 /  
Tape & Reel  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
December, 2016 − Rev. 1  
NSR02100HT1/D  

与NSVR02100HT1G相关器件

型号 品牌 获取价格 描述 数据表
NSVR0230M2T5G ONSEMI

获取价格

肖特基势垒整流器,30V,200mA,低 VF
NSVR0230P2T5G ONSEMI

获取价格

肖特基势垒整流器,200 mA,30 V
NSVR0240HT1G ONSEMI

获取价格

40 V,0.25 A 低红外肖特基二极管
NSVR0240MX2WT5G ONSEMI

获取价格

40 V, 200mA Schottky Barrier Diodes in X2DFN2 & X2DFNW2
NSVR0240P2T5G ONSEMI

获取价格

肖特基势垒整流器,200 mA,40 V
NSVR0240V2T1G ONSEMI

获取价格

Schottky Barrier Diode
NSVR0240V2T5G ONSEMI

获取价格

40 V,0.25 A 低 IR 肖特基二极管
NSVR02HL40MX2WT5G ONSEMI

获取价格

Schottky Diode, 40V, 200mA
NSVR02L40MX2WT5G ONSEMI

获取价格

Schottky Diode, 40V, 200mA
NSVR0320MW2T1G ONSEMI

获取价格

Schottky Barrier Diodes