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NSVR1020MW2T1G PDF预览

NSVR1020MW2T1G

更新时间： 2023-06-19 14:31:36
品牌 Logo 应用领域
安森美 - ONSEMI 整流二极管
页数 文件大小 规格书
3页 41K
描述
1.0 A, 20 V, Low VF Schottky Diode

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NSVR1020MW2T1G 数据手册

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NSR1020MW2T1G  
Schottky Barrier Diodes  
This Schottky Barrier Diode in the SOD−323 package offers  
extremely low Vf performance. The low forward voltage makes them  
capable of handling high current in a very small package. The  
resulting device is ideally suited for application as a blocking diode in  
charging applications or as part of discrete buck converter or discrete  
boost converter. As part of a buck conversion circuit, a boost  
conversion circuit or a charging circuit the low Vf drop of the schottky  
improves the efficiency of the overall device by consuming less power  
in the forward mode.  
http://onsemi.com  
HIGH CURRENT  
SCHOTTKY BARRIER DIODE  
Features  
• Low Forward Voltage − 0.24 Volts (Typ) @ I = 10 mAdc  
F
• High Current Capability  
1
2
• ESD Rating − Human Body Model: CLASS 3B  
CATHODE  
ANODE  
− Machine Model: C  
• Pb−Free Packages are Available  
2
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 125°C unless otherwise noted)  
J
Rating  
Reverse Voltage  
Symbol  
Value  
20  
Unit  
Vdc  
V
1
RE MG  
SOD−323  
CASE 477  
STYLE 1  
V
R
G
Peak Revese Voltage  
V
30  
RM  
Forward Power Dissipation  
P
F
@ T = 25°C  
200  
2.0  
mW  
mW/°C  
A
RE = Specific Device Code  
Derate above 25°C  
M
= Date Code  
= Pb−Free Package  
G
Forward Current (DC)  
Continuous  
I
A
A
F
(Note: Microdot may be in either location)  
1
Forward Current  
I
F
t = 8.3 ms Half Sinewave  
5
ORDERING INFORMATION  
Junction Temperature  
T
125 Max  
−55 to +150  
°C  
°C  
J
Device  
Package  
Shipping†  
Storage Temperature Range  
T
stg  
NSR1020MW2T1G SOD−323 3000/Tape & Reel  
(Pb−Free)  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
NSR1020MW2T3G SOD−323 10,000/Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2006  
Publication Order Number:  
August, 2006 − Rev. 0  
NSR1020MW2T1/D  
123

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NSVR1020MW2T1G 替代型号

型号 品牌 替代类型 描述 数据表
NSR1020MW2T3G ONSEMI

类似代替

 Schottky Barrier Diodes
NSR1020MW2T1G ONSEMI

类似代替

 Schottky Barrier Diodes
BAS3010B03WE6327HTSA1 INFINEON

功能相似

 Rectifier Diode,

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