NSVR30CM3T5G

更新时间： 2023-06-19 14:31:36

品牌	Logo	应用领域
安森美 - ONSEMI		整流二极管肖特基二极管
页数	文件大小	规格书
4页	49K
描述
双共阴极肖特基二极管

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中文翻译

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数据手册

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NSVR30CM3T5G 数据手册

NSR30CM3T5G

Preferred Device

Dual Series Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand−held and portable applications where

space is limited.

http://onsemi.com

30 V

• Extremely Fast Switching Speed

• Low Forward Voltage − 0.35 V (Typ) @ I = 10 mA

• This is a Pb−Free Device

DUAL COMMON CATHODE

SCHOTTKY BARRIER

DIODES

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Forward Power Dissipation

Symbol

Value

Unit

ANODE

Volts

CATHODE

@ T = 25°C

Derate above 25°C

240

1.9

mW/°C

MARKING

DIAGRAM

Forward Current (DC)

200 Max

125 Max

−55 to +150

525

°C

Junction Temperature

SOT−723

CASE 631AA

STYLE 3

Storage Temperature Range

stg

°C

5C D

Thermal Resistance

Junction−to−Ambient (Note 1)

°C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

5C = Specific Device Code

= Date Code

1. FR−5 board with minimum mounting pad.

ORDERING INFORMATION

†

Device

NSR30CM3T5G

Package

Shipping

SOT−723 8000/Tape & Reel

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Preferred devices are recommended choices for future use

and best overall value.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

March, 2005 − Rev. 1

NSR30CM3T5G/D

12 3 4

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